Name: Fabricação Livre de Resíduos de Heteroestruturas de van der Waals de Materiais Bidimensionais (Vídeo) | JoVE Journal
Uploaded: 2025-07-18T15:10:00.000+00:00
Duration: 4 min 57 s
Description: Aprenda a fabricação livre de resíduos de heteroestruturas de van der Waals usando materiais bidimensionais. Este método avança a nanotecnologia com interfaces limpas e de alta qualidade.

ai_agent_IP

ai_agent

maintenance

instantTrialDurationMinutes

isBiopharma

enableNewMyJoveSectionDesign

educationFeatures

seoMetaApi

ai_copilot_institution_blacklist

ai_chat_institution_blacklist

freeAccessWindow

ssoRoleCapture

scheduledMaintenanceBanner

joveLabsFeatures

disable_autoplay_for_bots

extended_trial_duration

5 minutes

<ol><li>Piacentini, A., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Stable+Al2O3+encapsulation+of+MoS2-FETs+enabled+by+CVD+grown+h-BN%5BTitle%5D)+AND+%22Adv+Electron+Mater%22%5BJournal%5D)">Stable Al2O3 encapsulation of MoS2-FETs enabled by CVD grown h-BN.</a> Adv Electron Mater. 8 (9), 2200123(2022).</li>
<li>Wu, Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((scaled+graphene+transistors+on+diamond-like+carbon%5BTitle%5D)+AND+%22Nature%22%5BJournal%5D)">scaled graphene transistors on diamond-like carbon.</a> Nature. 472 (7341), 74-78 (2011).</li>
<li>Zhang, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Memristors+based+on+two-dimensional+h-BN+materials%3A+synthesis%2C+mechanism%2C+optimization+and+application%5BTitle%5D)+AND+%22NPJ+2D+Mater+Appl%22%5BJournal%5D)">Memristors based on two-dimensional h-BN materials: synthesis, mechanism, optimization and application.</a> NPJ 2D Mater Appl. 8 (1), 81(2024).</li>
<li>Xia, F., Mueller, T., Lin, Y., Valdes-Garcia, A., Avouris, P. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Ultrafast+graphene+photodetector%5BTitle%5D)+AND+%22Nat+Nanotechnol%22%5BJournal%5D)">Ultrafast graphene photodetector.</a> Nat Nanotechnol. 4 (12), 839-843 (2009).</li>
<li>Lopez-Sanchez, O., Lembke, D., Kayci, M., Radenovic, A., Kis, A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Ultrasensitive+photodetectors+based+on+monolayer+MoS2%5BTitle%5D)+AND+%22Nat+Nanotechnol%22%5BJournal%5D)">Ultrasensitive photodetectors based on monolayer MoS2.</a> Nat Nanotechnol. 8 (7), 497-501 (2013).</li>
<li>Yan, Z., Liu, G., Khan, J. M., Balandin, A. A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Graphene+quilts+for+thermal+management+of+high-power+GaN+transistors%5BTitle%5D)+AND+%22Nat+Commun%22%5BJournal%5D)">Graphene quilts for thermal management of high-power GaN transistors.</a> Nat Commun. 3 (1), 827(2012).</li>
<li>Acerce, M., Voiry, D., Chhowalla, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Metallic+1T+phase+MoS2+nanosheets+as+supercapacitor+electrode+materials%5BTitle%5D)+AND+%22Nat+Nanotechnol%22%5BJournal%5D)">Metallic 1T phase MoS2 nanosheets as supercapacitor electrode materials.</a> Nat Nanotechnol. 10 (4), 313-318 (2015).</li>
<li>He, Q., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Fabrication+of+flexible+MoS2+thin-film+transistor+arrays+for+practical+gas-sensing+applications%5BTitle%5D)+AND+%22Small%22%5BJournal%5D)">Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications.</a> Small. 8 (19), 2994-2999 (2012).</li>
<li>Geim, A. K., Grigorieva, I. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Van+der+Waals+heterostructures%5BTitle%5D)+AND+%22Nature%22%5BJournal%5D)">Van der Waals heterostructures.</a> Nature. 499 (7459), 419-425 (2013).</li>
<li>Bellus, M. Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Type-I+van+der+Waals+heterostructure+formed+by+MoS2+and+ReS2+monolayers%5BTitle%5D)+AND+%22Nanoscale+Horiz%22%5BJournal%5D)">Type-I van der Waals heterostructure formed by MoS2 and ReS2 monolayers.</a> Nanoscale Horiz. 2 (1), 31-36 (2017).</li>
<li>Hong, X., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Ultrafast+charge+transfer+in+atomically+thin+MoS2%2FWS2+heterostructures%5BTitle%5D)+AND+%22Nat+Nanotechnol%22%5BJournal%5D)">Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures.</a> Nat Nanotechnol. 9 (9), 682-686 (2014).</li>
<li>Yan, R., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Esaki+diodes+in+van+der+Waals+heterojunctions+with+broken-gap+energy+band+alignment%5BTitle%5D)+AND+%22Nano+Lett%22%5BJournal%5D)">Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment.</a> Nano Lett. 15 (9), 5791-5798 (2015).</li>
<li>Withers, F., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Light-emitting+diodes+by+band-structure+engineering+in+van+der+Waals+heterostructures%5BTitle%5D)+AND+%22Nat+Mater%22%5BJournal%5D)">Light-emitting diodes by band-structure engineering in van der Waals heterostructures.</a> Nat Mater. 14 (3), 301-306 (2015).</li>
<li>Dong, W., Dai, Z., Liu, L., Zhang, Z. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Toward+clean+2D+materials+and+devices%3A+Recent+progress+in+transfer+and+cleaning+methods%5BTitle%5D)+AND+%22Adv+Mater%22%5BJournal%5D)">Toward clean 2D materials and devices: Recent progress in transfer and cleaning methods.</a> Adv Mater. 36 (22), 2303014(2024).</li>
<li>Liu, H., Zhao, J., Ly, T. H. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Clean+transfer+of+two-dimensional+materials%3A+A+comprehensive+review%5BTitle%5D)+AND+%22ACS+Nano%22%5BJournal%5D)">Clean transfer of two-dimensional materials: A comprehensive review.</a> ACS Nano. 18 (18), 11573-11597 (2024).</li>
<li>Pettes, M. T., Jo, I., Yao, Z., Shi, L. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Influence+of+polymeric+residue+on+the+thermal+conductivity+of+suspended+bilayer+graphene%5BTitle%5D)+AND+%22Nano+Lett%22%5BJournal%5D)">Influence of polymeric residue on the thermal conductivity of suspended bilayer graphene.</a> Nano Lett. 11 (3), 1195-1200 (2011).</li>
<li>Mondal, A., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Low+Ohmic+contact+resistance+and+high+on%2Foff+ratio+in+transition+metal+dichalcogenides+field-effect+transistors+via+residue-free+transfer%5BTitle%5D)+AND+%22Nat+Nanotechnol%22%5BJournal%5D)">Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer.</a> Nat Nanotechnol. 19 (1), 34-43 (2024).</li>
<li>Wang, L., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((One-dimensional+electrical+contact+to+a+two-dimensional+material%5BTitle%5D)+AND+%22Science%22%5BJournal%5D)">One-dimensional electrical contact to a two-dimensional material.</a> Science. 342 (6158), 614-617 (2013).</li>
<li>Wen, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Contamination-free+assembly+of+two-dimensional+van+der+Waals+heterostructures+toward+high-performance+electronics+and+optoelectronics%5BTitle%5D)+AND+%22Appl+Mater+Today%22%5BJournal%5D)">Contamination-free assembly of two-dimensional van der Waals heterostructures toward high-performance electronics and optoelectronics.</a> Appl Mater Today. 43, 102657(2025).</li>
<li>Pizzocchero, F., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((The+hot+pick-up+technique+for+batch+assembly+of+van+der+Waals+heterostructures%5BTitle%5D)+AND+%22Nat+Commun%22%5BJournal%5D)">The hot pick-up technique for batch assembly of van der Waals heterostructures.</a> Nat Commun. 7 (1), 11894(2016).</li>
<li>Wang, W., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Clean+assembly+of+van+der+Waals+heterostructures+using+silicon+nitride+membranes%5BTitle%5D)+AND+%22Nat+Electron%22%5BJournal%5D)">Clean assembly of van der Waals heterostructures using silicon nitride membranes.</a> Nat Electron. 6 (12), 981-990 (2023).</li>
<li>Lee, M., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Residue-free+fabrication+of+2D+materials+using+van+der+Waals+interactions%5BTitle%5D)+AND+%22Adv+Mater%22%5BJournal%5D)">Residue-free fabrication of 2D materials using van der Waals interactions.</a> Adv Mater. 37 (21), 2418669(2025).</li>
<li>Lee, G. -H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Flexible+and+transparent+MoS2+field-effect+transistors+on+hexagonal+boron+nitride-graphene+heterostructures%5BTitle%5D)+AND+%22ACS+Nano%22%5BJournal%5D)">Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride-graphene heterostructures.</a> ACS Nano. 7 (9), 7931-7936 (2013).</li>
<li>Lee, G. -H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Highly+stable%2C+dual-gated+MoS2+transistors+encapsulated+by+hexagonal+boron+nitride+with+gate-controllable+contact%2C+resistance%2C+and+threshold+voltage%5BTitle%5D)+AND+%22ACS+Nano%22%5BJournal%5D)">Highly stable, dual-gated MoS2 transistors encapsulated by hexagonal boron nitride with gate-controllable contact, resistance, and threshold voltage.</a> ACS Nano. 9 (7), 7019-7026 (2015).</li>
<li>Rokni, H., Lu, W. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Direct+measurements+of+interfacial+adhesion+in+2D+materials+and+van+der+Waals+heterostructures+in+ambient+air%5BTitle%5D)+AND+%22Nat+Commun%22%5BJournal%5D)">Direct measurements of interfacial adhesion in 2D materials and van der Waals heterostructures in ambient air.</a> Nat Commun. 11 (1), 5607(2020).</li>
<li>Eda, G., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Photoluminescence+from+chemically+exfoliated+MoS2%5BTitle%5D)+AND+%22Nano+Lett%22%5BJournal%5D)">Photoluminescence from chemically exfoliated MoS2.</a> Nano Lett. 11 (12), 5111-5116 (2011).</li>
<li>Ma, Z., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Control+of+hexagonal+boron+nitride+dielectric+thickness+by+single-layer+etching%5BTitle%5D)+AND+%22J+Mater+Chem+C%22%5BJournal%5D)">Control of hexagonal boron nitride dielectric thickness by single-layer etching.</a> J Mater Chem C. 7 (21), 6273-6278 (2019).</li>
<li>Peimyoo, N., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Laser-writable+high-k+dielectric+for+van+der+Waals+nanoelectronics%5BTitle%5D)+AND+%22Sci+Adv%22%5BJournal%5D)">Laser-writable high-k dielectric for van der Waals nanoelectronics.</a> Sci Adv. 5 (1), eaau0906(2019).</li>
<li>Liang, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Impact+of+post-lithography+polymer+residue+on+the+electrical+characteristics+of+MoS2+and+WSe2+field+effect+transistors%5BTitle%5D)+AND+%22Adv+Mater+Interfaces%22%5BJournal%5D)">Impact of post-lithography polymer residue on the electrical characteristics of MoS2 and WSe2 field effect transistors.</a> Adv Mater Interfaces. 6 (3), 1801321(2019).</li>
<li>Xiao, S., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Atomic-layer+soft+plasma+etching+of+MoS2%5BTitle%5D)+AND+%22Sci+Rep%22%5BJournal%5D)">Atomic-layer soft plasma etching of MoS2.</a> Sci Rep. 6, 19945(2016).</li>
<li>Koperski, M., Vaclavkova, D., Watanabe, K., Taniguchi, T., Novoselov, K. S., Potemski, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Midgap+radiative+centers+in+carbon-enriched+hexagonal+boron+nitride%5BTitle%5D)+AND+%22Proc+Natl+Acad+Sci%22%5BJournal%5D)">Midgap radiative centers in carbon-enriched hexagonal boron nitride.</a> Proc Natl Acad Sci. 117 (24), 13214-13219 (2020).</li>
<li>Li, H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((From+bulk+to+monolayer+MoS2%3A+Evolution+of+Raman+scattering%5BTitle%5D)+AND+%22Adv+Funct+Mater%22%5BJournal%5D)">From bulk to monolayer MoS2: Evolution of Raman scattering.</a> Adv Funct Mater. 22 (7), 1385-1390 (2012).</li>
<li>Bampoulis, P., Teernstra, V. J., Lohse, D., Zandvliet, H. J. W., Poelsema, B. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Hydrophobic+Ice+Confined+between+Graphene+and+MoS2%5BTitle%5D)+AND+%22J+Phys+Chem+C%22%5BJournal%5D)">Hydrophobic Ice Confined between Graphene and MoS2.</a> J Phys Chem C. 120 (47), 27079-27084 (2016).</li>
<li>Ghorbanfekr-Kalashami, H., Vasu, K. S., Nair, R. R., Peeters, F. M., Neek-Amal, M. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Dependence+of+the+shape+of+graphene+nanobubbles+on+trapped+substance%5BTitle%5D)+AND+%22Nat+Commun%22%5BJournal%5D)">Dependence of the shape of graphene nanobubbles on trapped substance.</a> Nat Commun. 8 (1), 15844(2017).</li>
<li>Haigh, S. J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Cross-sectional+imaging+of+individual+layers+and+buried+interfaces+of+graphene-based+heterostructures+and+superlattices%5BTitle%5D)+AND+%22Nat+Mater%22%5BJournal%5D)">Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices.</a> Nat Mater. 11 (9), 764-767 (2012).</li>
<li>Purdie, D. G., Pugno, N. M., Taniguchi, T., Watanabe, K., Ferrari, A. C., Lombardo, A. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Cleaning+interfaces+in+layered+materials+heterostructures%5BTitle%5D)+AND+%22Nat+Commun%22%5BJournal%5D)">Cleaning interfaces in layered materials heterostructures.</a> Nat Commun. 9 (1), 5387(2018).</li>
<li>Rosenberger, M. R., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Nano-%26%2334%3BSqueegee%26%2334%3B+for+the+creation+of+clean+2D+material+interfaces%5BTitle%5D)+AND+%22ACS+Appl+Mater+Interfaces%22%5BJournal%5D)">Nano-&#34;Squeegee&#34; for the creation of clean 2D material interfaces.</a> ACS Appl Mater Interfaces. 10 (12), 10379-10387 (2018).</li>
<li>Hanbicki, A. T., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Double+indirect+interlayer+exciton+in+a+MoSe2%2FWSe2+van+der+Waals+heterostructure%5BTitle%5D)+AND+%22ACS+Nano%22%5BJournal%5D)">Double indirect interlayer exciton in a MoSe2/WSe2 van der Waals heterostructure.</a> ACS Nano. 12 (5), 4719-4726 (2018).</li>
<li>Liu, Y., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Interlayer+friction+and+superlubricity+in+single-crystalline+contact+enabled+by+two-dimensional+flake-wrapped+atomic+force+microscope+tips%5BTitle%5D)+AND+%22ACS+Nano%22%5BJournal%5D)">Interlayer friction and superlubricity in single-crystalline contact enabled by two-dimensional flake-wrapped atomic force microscope tips.</a> ACS Nano. 12 (8), 7638-7646 (2018).</li>
<li>Li, H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Superlubricity+between+MoS2+monolayers%5BTitle%5D)+AND+%22Adv+Mater%22%5BJournal%5D)">Superlubricity between MoS2 monolayers.</a> Adv Mater. 29 (27), 1701474(2017).</li>
<li>Tian, J., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Tribo-Induced+interfacial+material+transfer+of+an+atomic+force+microscopy+probe+assisting+superlubricity+in+a+WS2%2Fgraphene+heterojunction%5BTitle%5D)+AND+%22ACS+Appl+Mater+Interfaces%22%5BJournal%5D)">Tribo-Induced interfacial material transfer of an atomic force microscopy probe assisting superlubricity in a WS2/graphene heterojunction.</a> ACS Appl Mater Interfaces. 12 (3), 4031-4040 (2020).</li>
<li>Liang, D., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((First-principles+study+of+superlubricity+of+two-dimensional+graphene%2FWS2+heterostructures%5BTitle%5D)+AND+%22Tribol+Lett%22%5BJournal%5D)">First-principles study of superlubricity of two-dimensional graphene/WS2 heterostructures.</a> Tribol Lett. 73 (1), 1-9 (2025).</li>
<li>Li, H., et al. <a target="_blank" href="http://www.ncbi.nlm.nih.gov/pubmed?term=((Superlubricity+of+molybdenum+disulfide+film%5BTitle%5D)+AND+%22Surf+Sci+Technol%22%5BJournal%5D)">Superlubricity of molybdenum disulfide film.</a> Surf Sci Technol. 1 (1), 27(2023).</li>
</ol>

<table><tbody><tr><td>Microscópio de força atômica</td><td>Sistemas de Parques</td><td>XE-100</td><td></td></tr><tr><td>Microscópio Raman confocal</td><td>Horiba</td><td>Evolução do LabRAM HR</td><td></td></tr><tr><td>Ponta do AFM do modo do contato&nbsp;</td><td>Nanosensores</td><td>PPP-CONTSCR</td><td>Para medição do modo de contato, constante de mola: 0,2 N/m&nbsp;</td></tr><tr><td>Câmera digital</td><td>SONY</td><td>E3ISPM06300KPB</td><td></td></tr><tr><td>Fita Kapton de dupla face</td><td>Daehyun ST</td><td>ST-930H</td><td>Para prender a fita de face única à lâmina de vidro</td></tr><tr><td>cristal h-BN</td><td>Semicondutores 2D</td><td>BLK-hBN</td><td>Crescimento de células de bigorna de alta pressão</td></tr><tr><td>MoS2 cristal</td><td>Semicondutores 2D</td><td>BLK-MoS2-SYN</td><td>Cristal sintético, crescimento da zona de fluxo</td></tr><tr><td>Ponta do AFM do modo do Não-contato&nbsp;</td><td>Nanosensores</td><td>PPP-NCHR</td><td>Para nano compressão, alta constante de mola: 42 N / m</td></tr><tr><td>Microscópio óptico</td><td>OLIMPO</td><td>BX51</td><td></td></tr><tr><td>Sistema de plasma&nbsp;</td><td>Ciência Femto</td><td>CUTE-1MP/R</td><td>Para tratamento de plasma de oxigênio</td></tr><tr><td>Fita de face única</td><td>Nitto Denko</td><td>Revalpha RA-98LS(N)</td><td>Fita de alta rigidez</td></tr><tr><td>Limpador ultrassônico</td><td>Branson</td><td>5510E-DTH</td><td></td></tr></tbody></table>

fabricação livre de resíduos de heteroestruturas de van der waals de materiais bidimensionais

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

O protocolo aqui descrito fabrica flocos únicos livres de resíduos e conjuntos de heteroestrutura complexa, utilizando exclusivamente interações vdW. No estudo anterior, foram realizadas caracterizações abrangentes da morfologia da superfície, composição química e propriedades elétricas de flocos de MoS2 livres de resíduos22. Como mostrado na Figura 7, HR-TEM foi empregado para examinar a estrutura da superfície no nível atô...

Fabricação Livre de Resíduos de Heteroestruturas de van der Waals de Materiais Bidimensionais

In this work, a unique methodology is presented that utilizes van der Waals (vdW) interactions to fabricate residue-free single flakes of two-dimensional ...

residue-free-fabrication-van-der-waals-heterostructures-two

Research

JoVE Journal

Engineering

Engenharia

Relatamos um protocolo para combinar a metrologia atômica do Microscópio de Tunelamento de Varredura para padronização de superfície com Deposição Atômica Seletiva de Camada e Gravação de Íons Reativos. Usando um processo robusto envolvendo inúmeras exposições atmosféricas e transporte, nanoestruturas 3D com metrologia atômica são fabricadas.

Atomicamente rastreável Fabrication Nanostructure

Descrevemos a metodologia de esfoliação mecânica e deposição de flocos de novos materiais com dimensões de tamanho mícron no substrato, fabricação de estruturas de dispositivos experimentais para experimentação de transporte e a medição de magnetotransporte em um criostato de ciclo fechado de hélio seco em temperaturas de até 0,300 K e campos magnéticos de até 12 T.

Métodos experimentais avançados para baixa temperatura Magnetotransporte Medição de novos materiais

Através do sulfurization de metais de transição previamente depositados, hetero-estruturas de grande área e vertical cristal 2D podem ser fabricados. O filme de transferência e os procedimentos de fabricação do dispositivo também são demonstrados neste relatório.

Preparação da grande-área Vertical 2D cristal Hetero-estruturas através da Sulfurization dos filmes de Metal de transição para a fabricação de dispositivo

Um protocolo é apresentado demonstrando uma técnica de fabricação de duas etapas para crescer de grande porte de camada única retangular SnSe em forma de flocos no baixo custo SiO2/Si dielétricos discos (wafers) em um sistema de fornalha de tubo de quartzo de pressão atmosférica.

Fabricação de pressão atmosférica de grande porte camada única retangular SnSe flocos

Neste trabalho, apresentamos um protocolo diretamente crescer um epitaxial ainda elemento de memória de titanato de zircônio chumbo flexível na mica moscovita.

Um método de medição para um elemento ferroelétrica flexível baseado em Heteroepitaxy de Van Der Waals e fabricação

O artigo tem como objetivo apresentar um procedimento de fabricação padrão e confiável para o desenvolvimento da futura baixa nanoelectrónica dimensional.

Um método padrão e confiável para fabricar nanoelectrónica bidimensional

Realização de contatos de Schottky de alta qualidade é fundamental para alcançar a modulação eficiente portão em transistores de efeito de campo heterostructure (virais). Apresentamos a metodologia de fabricação e características de diodos de Schottky na BeMgZnO/ZnO Zn-polar estende com gás de elétrons dimensional dois high-density (2DEG), cultivadas por Epitaxia de feixe molecular assistido por plasma em modelos de GaN.

Fabricação de diodos de Schottky na Zn-polar BeMgZnO/ZnO Heterostructure cultivadas por Epitaxia de feixe Molecular assistido por Plasma

Neste trabalho nós descrevemos uma técnica que seja usada para criar cristais novos (heterostructures de Van der Waals) empilhando materiais 2D mergulhados ultrafinos com controle preciso sobre a posição e a orientação relativa.

Fabricando Van der Waals Heterostructures com alinhamento rotativo preciso

Os cálculos realizados pelo pacote de simulação de Viena ab initio podem ser usados para identificar as propriedades eletrônicas intrínsecas dos materiais de nanoescala e prever os fotocatalisadores potenciais de divisão de água.

Tipo de sonda II alinhamento de banda em unidimensional Van der Waals Heterostructures usando cálculos de primeiros-princípios

Este artigo apresenta um protocolo otimizado e informado pela experiência para a fabricação de dispositivos de super-rede moiré à base de grafeno de alta qualidade com ângulos de torção precisos, utilizando uma técnica de transferência a seco modificada com base em uma configuração de transferência personalizada e altamente ajustável.

Procedimento de fabricação otimizado para dispositivos de super-rede Moiré à base de grafeno de alta qualidade

Aprenda a fabricação livre de resíduos de heteroestruturas de van der Waals usando materiais bidimensionais. Este método avança a nanotecnologia com interfaces limpas e de alta qualidade.

Fabricação Livre de Resíduos de Heteroestruturas de van der Waals de Materiais Bidimensionais

Explorar mais vídeos