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In the microelectronics field, as in many other fields, non-destructive evaluation at the micrometer scale is necessary when characterizing samples. Specifically for the microelectronics industry there is interest in probing 3D microelectronics packages, containing multi-levels and multi-materials, and identifying failures in packages during thermal, electrical, and mechanical stressing of components. Around the world synchrotron radiation facilities have designated tomography and diffraction beamlines that are used for failure analysis of microelectronic packages. Some examples of this are imaging void formation caused by electromigration1-3, evaluating mechanisms for tin whisker growth4,5, in situ observations of undercooling and anisotropic thermal expansion of tin and intermetallic compounds (IMCs)6,7, in situ observation of solidification and IMC formation8-10, anisotropic mechanical behavior and recrystallization of tin and lead free solders10, voids in flip chip bumps, and in situ observations of Ag-nanoink sintering11. All of these studies have further advanced the understanding and development of components in the microelectronic industry. However, many of these studies have focused on small regions within the package. More information could be gleaned from testing and characterizing the full size package using high resolution SRµT in order to further their development.
The electronic packages being produced now contain multiple layers of interconnects. These packages and devices are growing more and more complex which calls for a 3D solution for non-destructive evaluation with regard to failure analysis, quality control, reliability risk assessment, and development. Certain defects require a technique that can detect features less than 5 µm in size, which include voids and cracks forming inside copper substrate vias, identifying non-contact open and nonwet solder pads in multilevel packaging12, locating and quantifying voids in ball grid arrays (BGAs) and C4 solder joints. During the substrate assembly process these types of defects must be identified and monitored extensively to avoid unwanted failures.
Currently CT systems using laboratory-based sources, also known as tabletop, are able to provide as high as ~1 µm spatial resolution, and are being used to isolate failures in multilevel packages with promising results. However, tabletop CT systems have some limitations when compared to SRµT setups13,14. Tabletop systems are limited to only imaging a certain density range of materials since they usually only contain one or two x-ray source spectrums. Also through-put-time (TPT) remains long for conventional tabletop CT systems requiring several hours of data acquisition time per 1-2 mm2 region of interest, which can limit its usefulness; for instance, analyzing failures in Through Silicon Vias (TSV), BGAs or C4 joints often require acquiring multiple Field of Views (FoV) or regions of interest at high resolution within the sample, resulting in total TPT of 8-12 hours, which is a show stopper for conventional tabletop CT systems when multiple samples have to be analyzed. Synchrotron radiation provides much higher flux and brightness than conventional x-ray sources, resulting in much faster data acquisition times for a given region of interest. Although SRµT does allow for more flexibility with respect to types of materials that can be imaged and sample volume, it does have limitations, which are specific to the synchrotron source and setup used, specifically maximum acceptable thickness and sample size. For the SRµT setup at the ALS the maximum cross-sectional area that can be imaged is <36 x 36 mm and the thickness is limited by the energy range and flux available and is material specific.
This study is used to demonstrate how SRµT can be utilized to image an entire multi-level system in package (SIP) with high resolution and low TPT (3-20 min) for use in inspecting 3D semiconductor packages. More details on comparing tabletop CT's to Synchrotron Source CT's can be found in references13,14.
Experimental Overview & Beamline 8.3.2 Description:
There are synchrotron facilities available for tomography experiments around the world; most of these facilities require submission of a proposal where the experimentalist describes the experiment, as well as its scientific impact. The experiments described here were all performed at the ALS at Lawrence Berkeley National Laboratory (LBNL) at beamline 8.3.2. For this beamline there are two energy mode options: 1) monochromatic in the energy range ~7-43 keV or 2) polychromatic "white" light where the entire available energy spectrum is used when scanning high density materials. During a typical scan at beamline 8.3.2 a sample is mounted on a rotational stage where x-rays penetrate the sample, then the attenuated x-rays are converted into visible light through a scintillator, magnified by a lens, and then projected onto a CCD for recording. This is done while the sample rotates from 0 to 180° producing a stack of images that is reconstructed to obtain a 3D view of the sample with micrometer resolution. The resulting tomographic dataset size ranges from ~3-20 Gb depending on the scan parameters. Figure 1 shows a schematic of the hutch where the sample is scanned.
The following protocol presented here describes the experimental setup, data acquisition, and processing steps required for imaging an entire microelectronic package, but the steps can be modified to image a variety of samples. The modifications depend on the sample size, density, geometries, and features of interest. Tables 1 and 2 present the resolution and sample size combinations available at beamline 8.3.2 (ALS, LBNL, Berkeley, CA). For the microelectronic package investigated here the sample was imaged using a polychromatic ("white") beam, which was selected due to the thickness and high-density of the sample's components. The sample was mounted in the horizontal orientation on a chuck mount, this orientation allowed for the entire sample to fit within the height of the beam, which is parallel with a height of ~4 mm and width of ~40 mm, therefore only requiring one scan to capture the entire sample.