Using Synchrotron Radiation Microtomography to Investigate Multi-scale Three-dimensional Microelectronic Packages

Summary

For this study synchrotron radiation micro-tomography, a non-destructive three-dimensional imaging technique, is employed to investigate an entire microelectronic package with a cross-sectional area of 16 x 16 mm. Due to the synchrotron's high flux and brightness the sample was imaged in just 3 min with an 8.7 µm spatial resolution.

Abstract

Synchrotron radiation micro-tomography (SRµT) is a non-destructive three-dimensional (3D) imaging technique that offers high flux for fast data acquisition times with high spatial resolution. In the electronics industry there is serious interest in performing failure analysis on 3D microelectronic packages, many which contain multiple levels of high-density interconnections. Often in tomography there is a trade-off between image resolution and the volume of a sample that can be imaged. This inverse relationship limits the usefulness of conventional computed tomography (CT) systems since a microelectronic package is often large in cross sectional area 100-3,600 mm², but has important features on the micron scale. The micro-tomography beamline at the Advanced Light Source (ALS), in Berkeley, CA USA, has a setup which is adaptable and can be tailored to a sample's properties, i.e., density, thickness, etc., with a maximum allowable cross-section of 36 x 36 mm. This setup also has the option of being either monochromatic in the energy range ~7-43 keV or operating with maximum flux in white light mode using a polychromatic beam. Presented here are details of the experimental steps taken to image an entire 16 x 16 mm system within a package, in order to obtain 3D images of the system with a spatial resolution of 8.7 µm all within a scan time of less than 3 min. Also shown are results from packages scanned in different orientations and a sectioned package for higher resolution imaging. In contrast a conventional CT system would take hours to record data with potentially poorer resolution. Indeed, the ratio of field-of-view to throughput time is much higher when using the synchrotron radiation tomography setup. The description below of the experimental setup can be implemented and adapted for use with many other multi-materials.

Introduction

In the microelectronics field, as in many other fields, non-destructive evaluation at the micrometer scale is necessary when characterizing samples. Specifically for the microelectronics industry there is interest in probing 3D microelectronics packages, containing multi-levels and multi-materials, and identifying failures in packages during thermal, electrical, and mechanical stressing of components. Around the world synchrotron radiation facilities have designated tomography and diffraction beamlines that are used for failure analysis of microelectronic packages. Some examples of this are imaging void formation caused by electromigration^1-3, evaluating me....

Protocol

Note: Protocol details described below were written specifically for work at beamline 8.3.2 at the ALS, Berkeley, CA. Adaptations may be required for work at other synchrotron facilities, which can be found around the world. Appropriate safety and radiation training is required for running experiments at these facilities and the guidelines for training can be found on each individual synchrotron facility's website. Any changes or updates to the tomography protocol (ALS, LBNL, Berkeley, CA) can be found on the beamline manual¹⁵. Details on the tomography process can be found in Reference¹⁶. The beamline scientists are available to answer any questions and will fac....

Results

The images captured using tomography occur due to the differential absorption of x-rays in the solder interconnects, metallic traces, and other materials in the microelectronic package as a function of the different attenuation lengths and thickness of these multi-materials. The SIP package consisted of a silicon die attached to a ceramic substrate with first level interconnect (FLI) flip chip C4 solder balls of approximately 80 µm diameter; mid-level interconnect (MLI) solder balls of approximately 350 µm connecting thi.......

Discussion

All of the steps described in the protocol section are critical to obtaining high-resolution images of multi-scale and multi-material samples. One of the most critical steps is the sample mounting and the focusing of optics, which are vital to obtaining quality images that can be used for quantification. Specifically, even slight movement of the sample would cause artifacts in the reconstructed image and defocusing would cause deterioration in resolution. To avoid issues with image quality it is important to reconstruct .......

Materials

List of materials used in this article

Name	Company	Catalog Number	Comments
Beamline 8.3.2	Advanced Light Source, Berkeley, CA, USA		http://microct.lbl.gov/