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Research Article

Improving Thermoelectric Properties of Bi2Te3 Thin Films By Manganese Co-Sputtering

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DOI:

10.3791/71082

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June 5th, 2026

In This Article

Summary

A radiofrequency co-sputtering protocol was developed to fabricate manganese-doped Bi2Te3 thin films and evaluate how manganese input influences structural and thermoelectric transport properties. Moderate manganese incorporation improved film uniformity and power-factor-related transport behavior, while higher manganese input increased structural disorder and resistivity.

Abstract

Bi2Te3 remains a benchmark n-type thermoelectric (TE) material for low-temperature energy conversion, but its small band gap can reduce efficiency because of thermally generated parasitic carriers. Elemental doping has been explored to improve TE performance, although systematic studies on manganese (Mn)-doped Bi2Te3 thin films remain limited. In this study, a radiofrequency magnetron co-sputtering workflow was used to fabricate Mn-doped Bi2Te3 thin films by varying Mn target power while maintaining constant Bi2Te3 deposition conditions. Structural, microstructural, compositional, and TE transport properties were evaluated using X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and temperature-dependent transport measurements. X-ray diffraction confirmed retention of the rhombohedral Bi2Te3 phase with a preferred (015) orientation, while peak shifts toward higher 2θ values were consistent with Mn-related lattice contraction. All films exhibited negative Seebeck coefficients, confirming n-type conduction. Increasing Mn doping enhanced the magnitude of the Seebeck coefficient but also increased electrical resistivity, demonstrating a transport tradeoff. The film deposited at 5 W Mn power achieved the highest power factor of 529.33 µW m−1 K−2 at 523 K because of its low resistivity combined with adequate thermopower. These results demonstrate that moderate Mn incorporation can improve the power-factor-related performance of Bi2Te3 thin films within the measured temperature range.

Introduction

Thermoelectric (TE) materials play a crucial role in the sustainable conversion of heat into electrical energy, primarily through the Seebeck and Peltier effects. The performance of TE materials is typically evaluated using the power factor (PF = S2/ρ), where S is the Seebeck coefficient and ρ is the electrical resistivity1,2. A high S coupled with low ρ indicates efficient carrier transport, which is essential for applications such as waste-heat recovery, micro-power generation, and solid-state cooling in industrial systems and microele....

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Protocol

No human participants, animal subjects, or biological tissues were used in this study; therefore, institutional ethics approval was not required.

Overview
Mn-doped Bi2Te3 thin films were deposited on soda-lime glass (SLG) substrates by RF magnetron co-sputtering. Depositions were performed without intentional substrate heating, and the chamber/substrate temperature during sputtering was maintained at 298 K ± 1 K. The target-to-substrate distance was fixed at 55 mm for both sputter guns. The Bi2Te3 target was operated at a fixed RF power of 100 W, while the Mn target RF power w....

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Results

Representative outcomes are presented for the Mn power series (0, 5, 10, 15 W), using the undoped film (0 W) as the control condition for structural and transport comparisons.

Crystal structure (XRD)
XRD patterns confirm that all samples retained the rhombohedral Bi2Te3 phase (JCPDS No. 15-0863) across the Mn power series, as shown in Figure 4. The dominant reflections, including a strong (015) preferred orientation, indi.......

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Discussion

This study demonstrated an RF co-sputtering workflow for tailoring the TE behavior of Bi2Te3 thin films by controlling Mn RF input while maintaining a constant Bi2Te3 target power. XRD confirmed the presence of the rhombohedral Bi2Te3 phase (JCPDS No. 15-0863) with a preferred (015) orientation across all samples. The systematic shift of the (015) reflection toward higher 2θ values is consistent with Mn-related lattice contraction and possible Mn inco.......

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Disclosures

The authors declare no competing financial interests or other conflicts of interest.

Acknowledgements

The authors are grateful for the support provided by the Universiti Kebangsaan Malaysia, under grant GGPM-2022-069. The authors also thank the Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia (UKM), for technical support and access to laboratory facilities throughout this study. The authors acknowledge the Centre for Research and Instrumentation Management (CRIM) for providing the XRD and FESEM–EDX facilities. In addition, the authors sincerely acknowledge Universiti Sains Islam Malaysia (USIM) for access to the Seebeck/resistivity measurement system used for Seebeck coefficient and electrical resistivity measurements. Finally, the authors ....

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Materials

List of materials used in this article
NameCompanyCatalog NumberComments
Acetone (≥99.5%)Merck100012Substrate cleaning solvent
Aluminum foilPospaperroll86871915Chamber lining and substrate-holder covering
Argon gas (Ar)Gaslink Industrial Gases Sdn. Bhd.N/A (supplied by distributor)Sputtering working gas; 4 sccm flow; grade 5.0 (99.999%)
Bismuth telluride sputtering target, 50.8 mm diameter, 4.25 mm thickness, 99.999%Changsha Xinkang Advanced Materials Co., Ltd.xk-Bi2Te3Bi2Te3 target; fixed RF power = 100 W
Deionized waterIn-houseN/ASubstrate rinsing and ultrasonic cleaning
Energy-dispersive X-ray spectroscopy detectorIntegrated with FESEM systemN/AThin-film compositional analysis
Field-emission scanning electron microscopeCarl ZeissSUPRA 55VPSurface microstructure imaging
Glass substrates, soda-lime glass, 1.1 mm thicknessMevidB105-2002Substrate for thin-film deposition
Hot plateIKAC-MAG HS 7Substrate drying at 393 K
Isopropyl alcohol (≥99.8%)Merck109634Substrate cleaning solvent
Laboratory detergentMerck107553Initial substrate cleaning
Coolant circulation unitFisher Scientific250LCUCooling circulation for sputter guns
Methanol (≥99.9%)Merck106009Substrate cleaning solvent
Manganese sputtering target, 50.8 mm diameter, 5.08 mm thickness, 99.999%Hunan Boyu Technology Co., Ltd.N/AMn target; RF power varied from 0 to 15 W
MultimeterRS PROEN61010-1 CATIIIElectrical isolation verification
Nitrogen gas (N2)Gaslink Industrial Gases Sdn. Bhd.N/A (supplied by distributor)Substrate drying after cleaning; grade 4.0 (99.99%)
Petri dish lidMerck41121812Chamber viewing-window protection; approximately 94 mm diameter × 16 mm height
RF magnetron sputtering systemCustom-builtN/ACo-sputtering of Bi2Te3 and Mn thin films
Seebeck/resistivity measurement system with platinum adapterLinseisLSR-3 (LSR L31)Seebeck coefficient and electrical resistivity measurements
TweezersFisher Scientific10-316BHandling cleaned substrates
Ultrasonic bathElmaElmaSonic S30HSolvent cleaning for methanol, acetone, isopropyl alcohol, and DI water
UV–ozone cleanerNovascan TechnologiesPSDP-UV4Substrate surface treatment
Vacuum storage containerAS ONE CorporationVMSample storage after deposition
Stylus profilometerBrukerDektakXTThin-film thickness measurement
X-ray diffractometerBrukerD8 ADVANCEθ–2θ XRD scans using Cu Kα radiation
DIFFRAC.EVABrukerDIFFRAC.EVA version 8Peak fitting, diffraction analysis, and graph plotting
OriginOriginLabOriginPro (64-bit)Peak fitting and graph plotting

References

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  2. Ben-Nana M, Abbassi A, Elhadadi B. Rb₂XCl₆ (X = Zr, Te, Pt): promising materials for high-temperature thermoelectric power generation. In: 2025 International Conference on Circuit, Systems and Communication (ICCSC). IEEE; 2025:1-7.
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Tags

Manganese DopingPower FactorSeebeck CoefficientElectrical ResistivityX-Ray DiffractionField Emission MicroscopyEnergy Dispersive Spectroscopy