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JoVE Journal
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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
 

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Article DOI: 10.3791/50581
November 1st, 2013

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Summary November 1st, 2013

This paper presents a detailed fabrication protocol for gate-defined semiconductor lateral quantum dots on gallium arsenide heterostructures. These nanoscale devices are used to trap few electrons for use as quantum bits in quantum information processing or for other mesoscopic experiments such as coherent conductance measurements.

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