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Journal / Engineering / シングルGaNナノ細線デバイスのための接触界面の解析…
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シングルGaNナノ細線デバイスのための接触界面の解析
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シングルGaNナノ細線デバイスのための接触界面の解析

Article DOI: 10.3791/50738-v • 11:13 min • November 15th, 2013
November 15th, 2013 •
1, 1, 1
1Quantum Electronics and Photonics Division, National Institute of Standards and Technology

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技術は、単一のGaNナノワイヤーデバイスの接触/基板とコンタクト/ NWインタフェースの検査と特徴付けを可能にするために、それらの基質からのNi / Auのコンタクト金属膜を除去するように開発された。

Tags

物理学、81号、ナノデバイス（電子的）、半導体材料、半導体デバイス、GaNから、ナノワイヤ、コンタクト、形態学
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