Login processing...

Trial ends in Request Full Access Tell Your Colleague About Jove
JoVE Journal
Engineering

A subscription to JoVE is required to view this content.
You will only be able to see the first 2 minutes.

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
 

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Article doi: 10.3791/54775
November 24th, 2016

Summary November 24th, 2016

Molecular beam epitaxy is used to grow N-polar InAlN-barrier high-electron-mobility transistors (HEMTs). Control of the wafer preparation, layer growth conditions and epitaxial structure results in smooth, compositionally homogeneous InAlN layers and HEMTs with mobility as high as 1,750 cm2/V∙sec.

Transcript

Read Article

Get cutting-edge science videos from JoVE sent straight to your inbox every month.

Waiting X
simple hit counter