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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Article DOI: 10.3791/54775-v • 10:31 min • November 24th, 2016
November 24th, 2016 •
1, 2, 2, 2, 2, 2
1NRC Postdoctoral Scholar, Naval Research Laboratory, 2Electronics Science and Technology Division, Naval Research Laboratory

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Molecular beam epitaxy is used to grow N-polar InAlN-barrier high-electron-mobility transistors (HEMTs). Control of the wafer preparation, layer growth conditions and epitaxial structure results in smooth, compositionally homogeneous InAlN layers and HEMTs with mobility as high as 1,750 cm2/V∙sec.

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Plasma-assisted Molecular Beam Epitaxy N-polar InAlN-barrier High-electron-mobility Transistors Growth Parameters Structural Quality Electrical Quality Nitride Semiconductors Performance Of Electronic Devices Materials Defects Wide Band Gap Transistors Semiconductor Materials Abrupt Interfaces Low Impurity Levels Transistors Gallium Coverage Cryo Panels Growth Chamber Effusion Cells Beam Flex Measurement Temperatures Shutter Beam Flex Ion Gage Measurement Cell Temperatures Load Lock Isolation Gate Valve
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