Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

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Cited by 2

08:12 min

September 8th, 2017

10.3791/55404-v

September 8th, 2017

9K views

Here, we present a protocol for the synthesis of CH3NH3I and CH3NH3Br precursors and the subsequent formation of pinhole-free, continuous CH3NH3PbI3-xBrx thin films for the application in high efficiency solar cells and other optoelectronic devices.

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Low Pressure Vapor assisted Solution Process

Chapters in this video

0:05

Title

0:52

Preparation of Methylammonium Halide

7:12

Conclusion

5:30

Results: Formation of Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

2:50

Preparation of Methylammonium Lead Halide Thin Films

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