Developing High Performance GaP/Si Heterojunction Solar Cells

This method can tell, answer key questions in stratified silicon integrated solar cell fabrication about how to maintain a high silicon bulk lifetime during the growth. The main advantages of this process are that we can achieve a long silicon bulk lifetime, even after heterovalent growth of the gallium phosphide carrier selective contact on silicon. This allows us to access the band gaps of other III-V semiconductors.

It's a form of multijunction solar cell with a silicon bottom cell. To begin, prepare a piranha solution in a high-density polyethylene acid heating bath, heating it to 110 degrees Celsius, and wait for the temperature to stabilize. In another acid bath, prepare a diluted hydrochloric acid and hydrogen peroxide solution for removing ionic contamination, heating it to 74 degrees Celsius and waiting for the temperature to stabilize.