Dual Beam Fib
Dual Beam Fib - Related Videos
09:16
FIBS-enabled Noninvasive Metabolic Profiling
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2014
A description of how to calibrate Förster Resonance Energy Transfer integrated biological sensors (FIBS) for in situ metabolic profiling is presented. The FIBS can be used to measure intracellular levels of metabolites noninvasively aiding in the development of metabolic models and high throughput screening of bioprocess conditions.
10:58
Focused Ion Beam Fabrication of LiPON-based Solid-state Lithium-ion Nanobatteries for In Situ Testing
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Cited by 9 •
2018
A protocol for the fabrication of electrochemically active LiPON-based solid-state lithium-ion nanobatteries using a focused ion beam is presented.
08:29
Workflow Using a Cryogenic Coincident Fluorescence, Electron, and Ion Beam Microscope for Targeted Milling of Cells
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Cited by 2 •
2025
This workflow enables lamella production targeting fluorescently labeled biological structures that are small (<1 μm in axial extent) and rare (1 copy per cell) using a cryogenic tri-coincident imaging platform. This platform integrates fluorescence microscopy, focused ion beam milling, and scanning electron microscopy at a single focal position and enables simultaneous fluorescence microscopy while milling.
09:30
Focused Ion Beams
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2023
Source: Sina Shahbazmohamadi and Peiman Shahbeigi-Roodposhti-Roodposhti, School of Engineering, University of Connecticut, Storrs, CT As electron microscopes become more complex and widely used in research labs, it becomes more of a necessity to introduce their capabilities. Focused ion beam (FIB) is an instrument that can be employed in order to fabricate, trim, analyze and characterize materials on mico- and nano-scales in a wide variety of fields from nano-electronics to medicine. FIB...
01:30
Beams
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2023
Beams are integral components of structural engineering and construction, designed to support loads applied at various points along their length. These long, straight members can be classified based on geometry, cross-section, support type, and equilibrium condition. Based on geometry, beams can be straight, tapered, or curved. Straight beams are the most common type and have a constant cross-section throughout their length. Tapered beams, on the other hand, have a varying cross-section along...
FAQs
The ion beam performs localized material removal by sputtering atoms from a selected region, while the electron beam supplies high-resolution images of the changing surface. This simultaneous or coordinated observation lets users monitor milling progress and adjust the work site based on visible structure, making the process more controlled than removal without integrated imaging.
The intended outcome determines how the ion beam is applied to the selected material. Localized milling can remove material for microscale machining, deeper removal can expose an internal cross-section, and carefully controlled removal can produce an electron-transparent specimen for transmission electron microscopy. Electron imaging helps locate and monitor each target during preparation.
Deposition adds material as a complement to ion-beam removal. When supported by the system, ion- or electron-induced deposition can contribute to fabrication or circuit-editing workflows rather than limiting the instrument to subtractive machining. The paired imaging capability helps users position and observe these site-specific operations at the selected region.
An ion beam alone can remove material but does not provide the integrated electron imaging described for this system. An SEM supplies high-resolution surface observation but does not perform the same focused sputtering for localized removal. Combining both functions supports image-guided milling, cross-sectioning, and specimen preparation within one coordinated engineering workflow.
A typical workflow begins by selecting and imaging a region with the SEM, followed by focused ion-beam removal of the chosen material. The operator then uses electron imaging to inspect the exposed structure and guide continued processing. Depending on the objective, the workflow may end with microscale machining, circuit editing, cross-section analysis, or preparation of an electron-transparent specimen.
Engineers can apply the system to semiconductor failure analysis and circuit editing, where a specific location must be examined or modified rather than treated broadly. Ion-beam milling exposes selected internal regions, while SEM imaging supports high-resolution observation during the operation. This site-specific approach connects physical structures with suspected device problems or targeted circuit changes.
By removing material in controlled, localized regions and imaging the resulting surfaces, the system can reveal internal structure through cross-sections and related specimen preparation. These observations help engineering investigations compare physical features with material or device behavior. Preparation of electron-transparent specimens also extends the workflow toward transmission electron microscopy when finer structural examination is required.