writing-and-low-temperature-characterization-of-oxide-nanostructures

Writing and Low-Temperature Characterization of Oxide Nanostructures

Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions.  Oxide ...

University of Pittsburgh

Nanoscale control of the metal-insulator transition at the interface between LaAlO(3) and SrTiO(3) provides a pathway for reconfigurable, oxide-based nanoelectronics. Four-terminal transport measurements of LaAlO(3)/SrTiO(3) nanowires at room temperature (T = 300 K) reveal an equivalent 2D Hall mobility greatly surpassing that of bulk SrTiO(3) and approaching that of n-type Si nanowires of comparable dimensions. This large enhancement of mobility is relevant for room-temperature device applications.

Shicheng Lu

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JoVE Journal Publications

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