scalable-quantum-integrated-circuits-on-superconducting-two

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

To form a coherent quantum transport in hybrid superconductor-semiconductor (S-Sm) junctions, the formation of a homogeneous and barrier-free interface ...

University of Cambridge

University of Sheffield

Quantum electronic components--such as quantum antidots and one-dimensional channels--are usually defined from doped GaAs/AlGaAs heterostructures using electron-beam lithography or local oxidation by conductive atomic force microscopy. In both cases, lithography and measurement are performed in very different environments, so fabrication and test cycles can take several weeks. Here we describe a different lithographic technique, which we call erasable electrostatic lithography (EEL), where patterns of charge are drawn on the device surface with a negatively biased scanning probe in the same low-temperature high-vacuum environment used for measurement. The charge patterns locally deplete electrons from a subsurface two-dimensional electron system (2DES) to define working quantum components. Charge patterns are erased locally with the scanning probe biased positive or globally by illuminating the device with red light. We demonstrate and investigate EEL by drawing and erasing quantum antidots, then develop the technique to draw and tune high-quality one-dimensional channels. The quantum components are imaged using scanned gate microscopy. A technique similar to EEL has been reported previously, where tip-induced charging of the surface or donor layer was used to locally perturb a 2DES before charge accumulation imaging.

Erasable electrostatic lithography for quantum components.

We report direct experimental evidence that the insulating phase of a disordered, yet strongly interacting two-dimensional electron system becomes unstable at low temperatures. As the temperature decreases, a transition from insulating to metal-like transport behavior is observed, which persists even when the resistivity of the system greatly exceeds the quantum of resistivity h/e2. The results have been achieved by measuring transport on a mesoscopic length scale while systematically varying the strength of disorder.

Low-temperature collapse of electron localization in two dimensions.

We report experimental observation of an unexpectedly large thermopower in mesoscopic two-dimensional (2D) electron systems in GaAs/AlGaAs heterostructures at sub-Kelvin temperatures and zero magnetic field. Unlike conventional nonmagnetic high-mobility 2D systems, the thermopower in our devices increases with decreasing temperature below 0.3 K, reaching values in excess of 100 microV/K, thus exceeding the free electron estimate by more than 2 orders of magnitude. With support from a parallel study of the local density of states, we suggest such a phenomenon to be linked to intrinsic localized states and many-body spin correlations in the system.

Highly enhanced thermopower in two-dimensional electron systems at millikelvin temperatures.

Epitaxial InAs quantum dots grown on GaAs substrate are being used in several applications ranging from quantum communications to solar cells. The growth mechanism of these dots also helps us to explore fundamental aspects of self-organized processes. Here we show that composition and strain profile of the quantum dots can be tuned by controlling in-plane density of the dots over the substrate with the help of substrate-temperature profile. The compositional profile extracted from grazing incidence x-ray measurements show substantial amount of inter-diffusion of Ga and In within the QD as a function of height in the low-density region giving rise to higher variation of lattice parameters. The QDs grown with high in-plane density show much less spread in lattice parameter giving almost flat density of In over the entire height of an average QD and much narrower photoluminescence (PL) line. The results have been verified with three different amounts of In deposition giving systematic variation of the In composition as a function of average quantum dot height and average energy of PL emission. 

Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements.

An increasing number of technologies require the fabrication of conductive structures on a broad range of scales and over large areas. Here, we introduce advanced yet simple electrohydrodynamic lithography (EHL) for patterning conductive polymers directly on a substrate with high fidelity. We illustrate the generality of this robust, low-cost method by structuring thin polypyrrole films via electric-field-induced instabilities, yielding well-defined conductive structures with feature sizes ranging from tens of micrometers to hundreds of nanometers. Exploitation of a conductive polymer induces free charge suppression of the field in the polymer film, paving the way for accessing scale sizes in the low submicron range. We show the feasibility of the polypyrrole-based structures for field-effect transistor devices. Controlled EHL pattering of conductive polymer structures at the micro and nano scale demonstrated in this study combined with the possibility of effectively tuning the dimensions of the tailor-made architectures might herald a route toward various submicron device applications in supercapacitors, photovoltaics, sensors, and electronic displays. 

Tunable Nanopatterning of Conductive Polymers via Electrohydrodynamic Lithography.

The generation of coherent and indistinguishable single photons is a critical step for photonic quantum technologies in information processing and metrology. A promising system is the resonant optical excitation of solid-state emitters embedded in wavelength-scale three-dimensional cavities. However, the challenge here is to reject the unwanted excitation to a level below the quantum signal. We demonstrate this using coherent photon scattering from a quantum dot in a micropillar. The cavity is shown to enhance the fraction of light that is resonantly scattered toward unity, generating antibunched indistinguishable photons that are 16 times narrower than the time-bandwidth limit, even when the transition is near saturation. Finally, deterministic excitation is used to create two-photon N00N states with which we make superresolving phase measurements in a photonic circuit. 

Cavity-enhanced coherent light scattering from a quantum dot.

The integration of magnetic materials with semiconductors will lead to the development of the next spintronics devices such as spin field effect transistor (SFET), which is capable of both data storage and processing. While the fabrication and transport studies of lateral SFET have attracted greatly attentions, there are only few studies of vertical devices, which may offer the opportunity for the future three-dimensional integration. Here, we provide evidence of two-terminal electrical spin injection and detection in Fe/GaAs/Fe vertical spin-valves (SVs) with the GaAs layer of 50 nanometers thick and top and bottom Fe electrodes deposited by molecular beam epitaxy. The spin-valve effect, which corresponds to the individual switching of the top and bottom Fe layers, is bias dependent and observed up to 20 K. We propose that the strongly bias- and temperature-dependent MR is associated with spin transport at the interfacial Fe/GaAs Schottky contacts and in the GaAs membranes, where balance between the barrier profiles as well as the dwell time to spin lifetime ratio are crucial factors for determining the device operations. The demonstration of the fabrication and spin injection in the vertical SV with a semiconductor interlayer is expected to open a new avenue in exploring the SFET.

Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves.

We report the results of an investigation of ambipolar transport in a quantum well of 15 nm width in an undoped GaAs/AlGaAs structure, which was populated either by electrons or holes using positive or negative gate voltage V , respectively. More attention was focussed on the low concentration of electrons n and holes p near the metal-insulator transition (MIT). It is shown that the electron mobility [Formula: see text] increases almost linearly with increase of n and is independent of temperature T in the interval 0.3 K-1.4 K, while the hole mobility [Formula: see text] depends non-monotonically on p and T. This difference is explained on the basis of the different effective masses of electrons and holes in GaAs. Intriguingly, we observe that at low p the source-drain current (I )-voltage (V) characteristics, which become non-linear beyond a certain I , exhibit a re-entrant linear regime at even higher I . We find, remarkably, that the departure and reappearance of linear behaviour are not due to non-linear response of the system, but due to an intrinsic mechanism by which there is a reduction in the net number of mobile carriers. This effect is interpreted as evidence of inhomogeneity of the conductive 2D layer in the vicinity of MIT and trapping of holes in 'dead ends' of insulating islands. Our results provide insights into transport mechanisms as well as the spatial structure of the 2D conducting medium near the 2D MIT.

Reappearance of linear hole transport in an ambipolar undoped GaAs/AlGaAs quantum well.

A superconducting hard gap in hybrid superconductor-semiconductor devices has been found to be necessary to access topological superconductivity that hosts Majorana modes (non-Abelian excitation). This requires the formation of homogeneous and barrier-free interfaces between the superconductor and semiconductor. Here, a new platform is reported for topological superconductivity based on hybrid Nb-In Ga As-quantum-well-Nb that results in hard superconducting gap detection in symmetric, planar, and ballistic Josephson junctions. It is shown that with careful etching, sputtered Nb films can make high-quality and transparent contacts to the In Ga As quantum well, and the differential resistance and critical current measurements of these devices are discussed as a function of temperature and magnetic field. It is demonstrated that proximity-induced superconductivity in the In Ga As-quantum-well 2D electron gas results in the detection of a hard gap in four out of seven junctions on a chip with critical current values of up to 0.2 µA and transmission probabilities of >0.96. The results, together with the large g-factor and Rashba spin-orbit coupling in In Ga As quantum wells, which indeed can be tuned by the indium composition, suggest that the Nb-In Ga As-Nb system can be an excellent candidate to achieve topological phase and to realize hybrid topological superconducting devices.

On-Chip Andreev Devices: Hard Superconducting Gap and Quantum Transport in Ballistic Nb-In Ga As-Quantum-Well-Nb Josephson Junctions.

InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation. In this work we show that&#13; In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2/V.s at ambient temperature, show&#13; an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm-1 that dominates the polar-optical mode scattering from ∼&#13; 70 K to 300 K. The optical phonon frequency is insensitive to the carrier density modulated with a surface&#13; gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and&#13; identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity&#13; scattering starts to dominate for temperatures &lt;100 K. In the high mobility In0.75Ga0.25As quantum well,&#13; GaAs-like phonons do not couple to the electron gas unlike the case of In0.53Ga0.47As quantum wells.

High mobility In<sub>0.75</sub>Ga<sub>0.25</sub>As quantum wells in an InAs phonon lattice.

The understanding of the correlation between structural and photoluminescence (PL) properties of self-assembled semiconductor quantum dots (QDs), particularly InGaAs QDs grown on (001) GaAs substrates, is crucial for both fundamental research and optoelectronic device applications. So far structural and PL properties have been probed from two different epitaxial layers, namely top-capped and buried layers respectively. Here, we report for the first time both structural and PL measurements from an uncapped layer of InGaAs QDs to correlate directly composition, strain and shape of QDs with the optical properties. Synchrotron X-ray scattering measurements show migration of In atom from the apex of QDs giving systematic reduction of height and enlargement of QDs base in the capping process. The optical transitions show systematic reduction in the energy of ground state and the first excited state transition lines with increase in capping but the energy of the second excited state line remain unchanged. We also found that the excitons are confined at the base region of these elliptically shaped QDs showing an interesting volume-dependent confinement energy scaling of 0.3 instead of 0.67 expected for spherical dots. The presented method will help us tuning the growth of QDs to achieve desired optical properties.

Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots.

We demonstrate the generation of a spatiotemporal optical continuum in a highly nonlinear exciton-polariton waveguide using extremely low excitation powers (2-ps, 100-W peak power pulses) and a submillimeter device suitable for integrated optics applications. We observe contributions from several mechanisms over a range of powers and demonstrate that the strong light-matter coupling significantly modifies the physics involved in all of them. The experimental data are well understood in combination with theoretical modeling. The results are applicable to a wide range of systems with linear coupling between nonlinear oscillators and particularly to emerging polariton devices that incorporate materials, such as gallium nitride and transition metal dichalcogenide monolayers that exhibit large light-matter coupling at room temperature. These open the door to low-power experimental studies of spatiotemporal nonlinear optics in submillimeter waveguide devices.

Article	Year
Erasable electrostatic lithography for quantum components. Nature\| PubMed ID: 12917677	2003
Low-temperature collapse of electron localization in two dimensions. Physical review letters\| PubMed ID: 18232805	2008
Highly enhanced thermopower in two-dimensional electron systems at millikelvin temperatures. Physical review letters\| PubMed ID: 19659228	2009
Density dependent composition of InAs quantum dots extracted from grazing incidence x-ray diffraction measurements. Scientific reports\| PubMed ID: 26506865	2015
Tunable Nanopatterning of Conductive Polymers via Electrohydrodynamic Lithography. ACS nano\| PubMed ID: 26905779	2016
Cavity-enhanced coherent light scattering from a quantum dot. Science advances\| PubMed ID: 27152337	2016
Spin-Dependent Transport in Fe/GaAs(100)/Fe Vertical Spin-Valves. Scientific reports\| PubMed ID: 27432047	2016
Reappearance of linear hole transport in an ambipolar undoped GaAs/AlGaAs quantum well. Journal of physics. Condensed matter : an Institute of Physics journal\| PubMed ID: 28266927	2017
On-Chip Andreev Devices: Hard Superconducting Gap and Quantum Transport in Ballistic Nb-In Ga As-Quantum-Well-Nb Josephson Junctions. Advanced materials (Deerfield Beach, Fla.)\| PubMed ID: 28804969	2017
High mobility In<sub>0.75</sub>Ga<sub>0.25</sub>As quantum wells in an InAs phonon lattice. Journal of physics. Condensed matter : an Institute of Physics journal\| PubMed ID: 29350626	2018
Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots. Scientific reports\| PubMed ID: 29760396	2018
Spatiotemporal continuum generation in polariton waveguides. Light, science & applications\| PubMed ID: 30651981	2019

Ian Farrer

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