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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Two-dimensional (2D) materials have attracted huge attention due to their unique properties and potential applications. Since wafer scale synthesis of 2D ...

National Taiwan Normal University

National Nano Device Laboratories (NDL)

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

Atomic-Monolayer MoS Band-to-Band Tunneling Field-Effect Transistor.

High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting electronics is highly desirable for the development of mobile devices, wearable electronic systems, and defense technologies. In this work, the experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe-MoS junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density, and flexible electronics.

Article	Year
Atomic-Monolayer MoS Band-to-Band Tunneling Field-Effect Transistor. Small (Weinheim an der Bergstrasse, Germany)\| PubMed ID: 27594654	2016
Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon. ACS nano\| PubMed ID: 28976732	2017

Yann-Wen Lan

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