Masashi Kato

Masashi Kato

Department of Electrical & Mechanical Engineering, Nagoya Institute of Technology

Affiliated withNagoya Institute of Technology

Research Area

Biography

Masashi Kato is an Associate Professor in Department of Electrical and Mechanical Engineering and Frontier Research Institute for Materials Science, Nagoya Institute of Technology (NITech), Japan. He received his undergraduate from NITech in 1998, and also a Ph.D. from NITech in 2003.

His research interests are semiconductor material characterization and semiconductor application. He has developed novel characterization systems for carrier recombination lifetime in wide band gap semiconductors, and based on such the characterization techniques, he has identified carrier recombination mechanisms in several semiconductor materials.

He has received the Award for Encouragement of Research in IUMRS-ICA2014 from The Materials Research Society of Japan (2014) and Prizes for Science and Technology (Public Understanding Promotion Category) from The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology (2014).

JoVE Journal Publications

ArticleTotal : 1
Year
Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Publication title

Cited by 17

2019

Other Publications

Article
Year
Risk Assessment of Neonatal Exposure to Low Frequency Noise Based on Balance in Mice.

Frontiers in behavioral neuroscience| PubMed ID: 28275341

2017
2017
2018