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Journal / Engineering / Carrier Lifetime Measurements in Semiconductors…
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Engineering

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Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
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Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

Article DOI: 10.3791/59007-v • 07:38 min • April 18th, 2019
April 18th, 2019 •
1, 1, 1,2
1Department of Electrical & Mechanical Engineering, Nagoya Institute of Technology, 2Frontier Research Institute for Material Science, Nagoya Institute of Technology

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Summary
Automatic Translation

As one of the important physical parameters in semiconductors, carrier lifetime is measured herein via a protocol employing the microwave photoconductivity decay method.

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Carrier Lifetime Measurements Semiconductors Microwave Photoconductivity Decay Method Micro-PCD Aberration Materials N-type 4H Silicon Carbide Epilayer Ultrasonic Washer Sulfuric Acid Hydrogen Chloride Sodium Sulfate Sodium Hydroxide Hydrofluoric Acid Aqueous Solution Quartz Cell Measuring Equipment Pulsed Laser
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