Junxi Wang

State Key Laboratory of Solid-State Lighting, Chinese Academy of Sciences

Affiliated withChinese Academy of Sciences University of Chinese Academy of Science

Research Area

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JoVE Journal Publications

ArticleTotal : 1	Year
Publication title Cited by 8	2020

Other Publications

Article	Year
Crystal phase evolution in kinked GaN nanowires. Nanotechnology\| PubMed ID: 31860878	2020
Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation. Nanoscale research letters\| PubMed ID: 20596453	2009
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands. Optics express\| PubMed ID: 21263645	2011
Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet etching. Optics express\| PubMed ID: 23481812	2013
Formation and characteristics of AlGaN-based three-dimensional hexagonal nanopyramid semi-polar multiple quantum wells. Nanoscale\| PubMed ID: 27174102	2016
Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy. Scientific reports\| PubMed ID: 27340030	2016
Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography. Nanotechnology\| PubMed ID: 28103586	2017
Nanostructure nitride light emitting diodes via the Talbot effect using improved colloidal photolithography. Nanoscale\| PubMed ID: 28537630	2017
Enhancing light coupling and emission efficiencies of AlGaN thin film and AlGaN/GaN multiple quantum wells with periodicity-wavelength matched nanostructure array. Nanoscale\| PubMed ID: 28976517	2017
Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate. Nanoscale\| PubMed ID: 29521388	2018
High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer. Advanced materials (Deerfield Beach, Fla.)\| PubMed ID: 29883036	2018
Method of the out-of-band rejection improvement of the AlN based surface acoustic wave filters. Ultrasonics\| PubMed ID: 30056273	2019
Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence. Nanotechnology\| PubMed ID: 30485254	2019
Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si. Materials (Basel, Switzerland)\| PubMed ID: 30486245	2018
Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂. Materials (Basel, Switzerland)\| PubMed ID: 30518146	2018
Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene. Advanced materials (Deerfield Beach, Fla.)\| PubMed ID: 30993771	2019
Epitaxy of III-Nitrides on β-GaO and Its Vertical Structure LEDs. Micromachines\| PubMed ID: 31086010	2019
Beyond 100 THz-spanning ultraviolet frequency combs in a non-centrosymmetric crystalline waveguide. Nature communications\| PubMed ID: 31278261	2019
Ultraviolet Wavelength Identification Using Energy Distribution of Hot Electrons. ACS omega\| PubMed ID: 31457684	2017
Surface-Polarity-Induced Spatial Charge Separation Boosts Photocatalytic Overall Water Splitting on GaN Nanorod Arrays. Angewandte Chemie (International ed. in English)\| PubMed ID: 31670455	2020
Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes through Using Work Function Tunable Cu Nanowires as the Top Transparent Electrode. The journal of physical chemistry letters\| PubMed ID: 32141757	2020