Tongbo Wei

State Key Laboratory of Solid-State Lighting, Chinese Academy of Sciences

Affiliated withChinese Academy of Sciences University of Chinese Academy of Science

Research Area

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JoVE Journal Publications

ArticleTotal : 1	Year
Publication title Cited by 8	2020

Other Publications

Article	Year
Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation. Nanoscale research letters\| PubMed ID: 20596453	2009
Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands. Optics express\| PubMed ID: 21263645	2011
Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes. Optics express\| PubMed ID: 22418563	2012
Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface. Optics express\| PubMed ID: 23038492	2012
Layer-by-Layer Approach to (2+1)D Photonic Crystal Superlattice with Enhanced Crystalline Integrity. Small (Weinheim an der Bergstrasse, Germany)\| PubMed ID: 26179658	2015
Recent advancement on micro-/nano-spherical lens photolithography based on monolayer colloidal crystals. Advances in colloid and interface science\| PubMed ID: 26732300	2016
Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy. Scientific reports\| PubMed ID: 27340030	2016
Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography. Nanotechnology\| PubMed ID: 28103586	2017
Ultrafast growth of horizontal GaN nanowires by HVPE through flipping the substrate. Nanoscale\| PubMed ID: 29521388	2018
High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer. Advanced materials (Deerfield Beach, Fla.)\| PubMed ID: 29883036	2018
Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire. Journal of the American Chemical Society\| PubMed ID: 30175921	2018
Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence. Nanotechnology\| PubMed ID: 30485254	2019
Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si. Materials (Basel, Switzerland)\| PubMed ID: 30486245	2018
Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂. Materials (Basel, Switzerland)\| PubMed ID: 30518146	2018
Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene. Advanced materials (Deerfield Beach, Fla.)\| PubMed ID: 30993771	2019
Epitaxy of III-Nitrides on β-GaO and Its Vertical Structure LEDs. Micromachines\| PubMed ID: 31086010	2019
Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer. Advanced materials (Deerfield Beach, Fla.)\| PubMed ID: 31140651	2019
Enhanced Emission of Deep Ultraviolet Light-Emitting Diodes through Using Work Function Tunable Cu Nanowires as the Top Transparent Electrode. The journal of physical chemistry letters\| PubMed ID: 32141757	2020