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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
 

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Article DOI: 10.3791/53200-v 08:12 min December 5th, 2015
December 5th, 2015

Kapitel

Summary

We describe the approaches for the device fabrication and electrical characterization of molybdenum diselenide (MoSe2) layer semiconductor nanostructures with different thicknesses. In addition, the fabrication of ohmic contacts for MoSe2-layer nanocrystals by the focused-ion beam deposition method using platinum (Pt) as a contact metal is described.

Tags

Keywords: Ohmic Contact Focused-ion Beam Layer Semiconductor MoSe2 Electrical Characterization Thickness-dependent Conductivity Surface-dominant Transport Two-dimensional Materials
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