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Journal / Engineering / N极性InAlN阻高电子迁移率晶体管的等离子体辅助分子束外延…
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N极性InAlN阻高电子迁移率晶体管的等离子体辅助分子束外延

Article DOI: 10.3791/54775-v • 10:31 min • November 24th, 2016
November 24th, 2016 •
1, 2, 2, 2, 2, 2
1NRC Postdoctoral Scholar, Naval Research Laboratory, 2Electronics Science and Technology Division, Naval Research Laboratory

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Summary
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分子束外延用来生长N极性InAlN阻高电子迁移率晶体管（HEMT器件）。在光滑，组成均匀InAlN层和HEMT的晶圆准备控制层生长条件和外延结构的结果与流动性高达1750厘米2 / V∙秒。

Tags

工程，第117，分子束外延，氮化镓，III族氮化物，InAlN，高电子迁移率晶体管，半导体生长
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