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Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Article DOI: 10.3791/55404-v • 08:12 min • September 8th, 2017
September 8th, 2017 •
*1,2,3, *1,4, 1,5,6, 1,7, 8,9, 2,3, 1, 1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
* These authors contributed equally

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Summary
Automatic Translation

Here, we present a protocol for the synthesis of CH3NH3I and CH3NH3Br precursors and the subsequent formation of pinhole-free, continuous CH3NH3PbI3-xBrx thin films for the application in high efficiency solar cells and other optoelectronic devices.

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Low Pressure Vapor-assisted Solution Process Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films Optoelectronics Solar Cells Lasers LEDs Synthetic Protocol Laboratories Processing Temperature Standard Equipment Fume Hoods Schlenk Lines Aya Buckley Phuong Ngo UC Berkeley Ethanol Round Bottom Flask Stir Bar Methylamine Hydroiodic Acid Ice Bath Septum Rotary Evaporator Water Bath Solvent Removal
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