Waiting
Login-Verarbeitung ...

Trial ends in Request Full Access Tell Your Colleague About Jove
Journal / Engineering / 硅上半圆柱空隙锗外延层位错还原的理论计算和实验验证…
JoVE Journal
Engineering

Ein Abonnement für JoVE ist erforderlich, um diesen Inhalt ansehen zu können. Melden Sie sich an oder starten Sie Ihre kostenlose Testversion.

JoVE Journal Engineering
硅上半圆柱空隙锗外延层位错还原的理论计算和实验验证
Scattering And Absorption of Light in Planetary Regoliths
Journal (Engineering)
Scattering And Absorption of Light in Planetary Regoliths
Design, Instrumentation and Usage Protocols for Distributed In Situ Thermal Hot Spots Monitoring in Electric Coils using FBG Sensor Multiplexing
Journal (Engineering)
Design, Instrumentation and Usage Protocols for Distributed In Situ Thermal Hot Spots Monitoring in Electric Coils using FBG Sensor Multiplexing
 
Click here for the English version

硅上半圆柱空隙锗外延层位错还原的理论计算和实验验证

Article DOI: 10.3791/58897-v • 06:57 min • July 17th, 2020
July 17th, 2020 •
1, 2, 1, 1,3
1Department of Materials Engineering, The University of Tokyo, 2Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 3Department of Materials Science and Engineering, Massachusetts Institute of Technology

Kapitel

Summary
Automatic Translation

Please note that all translations are automatically generated.

Click here for the English version.

提出了降低硅上半圆柱空隙的锗外延层螺纹位错（TD）密度的理论计算和实验验证。给出了基于TD与表面相互作用的计算方法，通过像力、TD测量和透射电子显微镜对TD的观测。

Tags

工程，第161期，硅光子学，锗，锗，晶体生长，选择性外延生长，螺纹位错密度，像力，理论计算，化学气相沉积，CVD，透射电子显微镜，TEM
Read Article

Get cutting-edge science videos from JoVE sent straight to your inbox every month.

Waiting X
Simple Hit Counter