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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Article DOI: 10.3791/52852-v • 14:58 min • June 3rd, 2015
June 3rd, 2015 •
1, 2, 1, 1, 2, 1
1School of Electrical Engineering & Telecommunications, University of New South Wales, 2QCD Labs, COMP Centre of Excellence, Department of Applied Physics, Aalto University

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The fabrication process and experimental characterization techniques relevant to single-electron pumps based on silicon metal-oxide-semiconductor quantum dots are discussed.

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Silicon Metal-oxide-semiconductor Quantum Dots Single-electron Pumping Nano-scale Transistors Quantum Mechanical Effects Tunneling Single Dopants Interface Defects Trap Charge States Silicon Technology Multi-layer-gated Silicon MOS Technology Electrostatically-defined Quantum Dots Quantum Computing Applications Single-electron Pumps Quantized Current Metrological Purposes Fabrication Protocol Characterization Methods Measurement Set-up Electric Current Quantization
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