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U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen
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U2O5 Film Preparation via UO2 Deposition by Direct Current Sputtering and Successive Oxidation and Reduction with Atomic Oxygen and Atomic Hydrogen

Article DOI: 10.3791/59017-v • 12:05 min • February 21st, 2019
February 21st, 2019 •
1, 1, 1, 1
1European Commission, Joint Research Centre, Directorate for Nuclear Safety and Security

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This protocol presents the preparation of U2O5 thin films obtained in situ under ultra-high vacuum. The process involves oxidation and reduction of UO2 films with atomic oxygen and atomic hydrogen, respectively.

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U2O5 Film UO2 Deposition Direct Current Sputtering Oxidation Reduction Atomic Oxygen Atomic Hydrogen Thin Films Uranium Oxides Physical Chemical Properties Surface Interaction X-ray Electron Spectroscopy Lab Station Sample Surfaces
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