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Lavtrykk damp-assistert løsningsprosessen for Tunable Band Gap Pinhole-fri Methylammonium bly metallhalid Perovskite filmer

Article DOI: 10.3791/55404-v • 08:12 min • September 8th, 2017
September 8th, 2017 •
*1,2,3, *1,4, 1,5,6, 1,7, 8,9, 2,3, 1, 1
1Joint Center for Artificial Photosynthesis, Chemical Sciences Division, Lawrence Berkeley National Laboratory, 2Electrical Engineering and Computer Sciences, University of California, Berkeley, 3Materials Science Division, Lawrence Berkeley National Laboratory, 4Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, 5Department of Physics, Graduate School of Nanotechnology, University of Trieste, 6TASC Laboratory, IOM-CNR - Istituto Officina dei Materiali, 7Department of Chemistry, University of California, Berkeley, 8Materials Science and Engineering, University of California, Berkeley, 9Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory
* These authors contributed equally

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Her presenterer vi en protokoll for syntese av CH3NH3jeg og CH3NH3Br prekursorer og påfølgende dannelsen av pinhole-fri, kontinuerlig CH3NH3PbI3-xBrx tynne filmer for den program i høy effektivitet solceller og andre Optoelektronisk enheter.

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Kjemi problemet 127 føre metallhalid Perovskite lavt trykk damp-assistert løsningsprosessen tynn Film solcelle Methylammonium metallhalid syntese Tunable Band Gap
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