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A MOS capacitor consists of a metal gate on top, typically made from aluminum or polysilicon; a thin insulating oxide layer, usually silicon dioxide (SiO2), in the middle; and a semiconductor substrate, commonly silicon, at the bottom. The metal gate controls the capacitor's voltage and influences carrier distribution in the semiconductor.

Applying positive voltage repels holes back into the substrate, creating a depletion region that acts as a series capacitance. With sufficiently high voltage, electrons concentrate at the surface, forming an inversion layer where the semiconductor type reverses. This inversion layer is critical for MOSFET operation and enables charge storage in memory devices.

Negative gate voltage attracts holes to the semiconductor surface, forming an accumulation region. The device behaves as a conventional capacitor with no current flow at zero voltage. This accumulation mechanism is fundamental to understanding how gate voltage controls charge distribution in the semiconductor.

The inversion layer formation increases electron concentration at the oxide-semiconductor interface, which further decreases total capacitance and causes a sharp increase in current. This capacitance variation with applied voltage is a key characteristic of MOS structures and directly affects device performance in integrated circuits.

Data writing in DRAM involves applying gate voltage to create an inversion layer that temporarily stores charge in the semiconductor. The presence or absence of this stored charge represents binary data. However, the charge is transient and requires periodic refreshing to maintain data integrity in memory applications.

Removing the applied voltage causes accumulated charge to dissipate, making the inversion layer disappear and switching off the device. This charge dissipation mechanism is essential for controlling device operation and enables the switching functionality required in transistor and memory applications.

The MOS capacitor is the fundamental structure underlying MOSFET design. The inversion layer created by gate voltage forms the conducting channel in MOSFETs, enabling current flow between source and drain. Understanding MOS capacitor behavior is essential for analyzing field effect transistor characteristics and performance.