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This article demonstrates the potential and advantages of a combination of X-ray computed tomography (CT) with correlative light and electron microscopy (CLEM) for the exemplary in depth characterization of light emitting diodes (LED). With this technique it is possible to plan the micro preparation of the LED in such a fashion that while a cross section can be imaged microscopically the electrical functionality is preserved in the remainder of the specimen. The procedure has several unique features: firstly, the planned micro preparation by aid of the rendered volume of the entire sample obtained by CT; secondly, the observation of the LED by light microscopy (LM) with the complete variety of imaging techniques available (bright and dark field, polarization contrast, etc.); thirdly, observation of the LED in operation by LM; fourthly, observation of identical regions with the full variety of electron microscopy imaging techniques comprising secondary electron (SE) and back scatter electron (BSE) imaging, as well as energy dispersive X-ray fluorescence spectroscopy (EDX).
LEDs for illumination applications are designed to emit white light, although in certain applications color variability may be favorable. This broad emission cannot be achieved by emission from one compound semiconductor, since LEDs emit radiation in a narrow spectral band (circa 30 nm full width half maximum (FWHM)). Therefore white LED light is commonly generated by the combination a blue LED with phosphors which convert the short-wavelength radiation into broad emission over a large spectral range1. Color variable LED solutions usually make use of at least three primaries, which generally results in higher market prices.2
The use of either CT, LM or SEM is of course well established (e.g., in failure analysis for LEDs3-15), however the comprehensive and purposeful combination of all three techniques described here may offer new insights and will enable faster tracks towards meaningful characterization results.
From 3D microstructural analysis of the packaged device in CT the regions of interest (ROIs) can be identified and selected. With this non-destructive method, electrical connections can also be identified and considered for further preparation. The precise preparation of a 2D cross section allows investigations of the device in operation despite the destructive nature of this method. The cross section can now be characterized by CLEM16,17 which enables a very efficient and flexible characterization of identical ROIs with LM as well as SEM. By this approach, the advantages of both microscopy techniques can be combined. For example, a fast identification of ROIs in the LM is followed by high-resolution imaging in the SEM. But furthermore, the correlation of information from the LM (e.g., color, optical properties, particle distribution) with the visualization and analysis techniques of the SEM (e.g., particle size, surface morphology, element distribution) allows a deeper understanding of functional behavior and microstructure within a white LED.