In this paper, we present a protocol to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica.
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Method Article
* These authors contributed equally
In this paper, we present a protocol to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica.
Flexible non-volatile memories have received much attention as they are applicable for portable smart electronic device in the future, relying on high-density data storage and low-power consumption capabilities. However, the high-quality oxide based nonvolatile memory on flexible substrates is often constrained by the material characteristics and the inevitable high-temperature fabrication process. In this paper, a protocol is proposed to directly grow an epitaxial yet flexible lead zirconium titanate memory element on muscovite mica. The versatile deposition technique and measurement method enable the fabrication of flexible yet single-crystalline non-volatile memory elements necessary for the next generation of smart devices.
The successful fabrication of flexible nonvolatile memory elements (NVME) plays a key role in exploiting the full potential of flexible electronics. NVME shall feature light weight, low cost, low-power consumption, fast speed and high storage density capabilities besides data storage, information processing and communication. Perovskite Pb (Zr,Ti)O3 (PZT) acts as a popular system for such applications considering its large polarization, fast polarization switching, high Curie temperature, low coercive field and high piezoelectric coefficient. In ferroelectric nonvolatile memories, an external voltage pulse can switch the two remnant polarizations between tw....
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1. Fabricating Flexible PZT Thin Films
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The epitaxial PZT/SRO/CFO/mica thin films were deposited with the pulsed laser deposition technique as outlined in Step 1. Figure 1 shows the growth scheme and Figure 2 shows an actual flexible NVM element based on the PZT.
Mechanical stability is a crucial aspect of flexible device application. The macroscopic ferroelectric performance of the heterostructure ag.......
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The key step in the fabrication of ferroelectric elements lies in the use of a clean and even/flat substrate surface. Though freshly cleaved mica surface is atomically smooth, it is necessary to pay attention to preventing surfaces from suffering visible splintering, split layers, cracks, inclusions, etc. After deposition of the PZT layer, the sample was cooled under a high oxygen pressure (200-500 Torr) to reduce the oxygen vacancies. Ex situ top platinum electrodes were deposited via a predefined mesh.......
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The authors have no competing financial interests to disclose.
This work was supported by National Natural Science Foundation of China (Grant Nos. 11402221 and 11502224), the State Key Laboratory of Intense Pulsed Radiation simulation and effect (SKLIPR1513) and the Hunan Provincial Key Research and Development Plan (No. 2016WK2014).
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| Name | Company | Catalog Number | Comments |
|---|---|---|---|
| Equipment | |||
| hot plate | Polish | P-20 | |
| PLD system | PVD products | PLD 5000 | |
| Ferroelectric test system | Radiant Technologies Precisions workstations | RT66A | |
| Semiconductor device analyzer | Agilent | B1500A | |
| Bending molds | home-made | Machined teflon material | |
| Bending stage | home-built | Labview interfaced setup which provides a prescise displacemnt as small as 1 micrometer | |
| Sputtering system | Beijing Elaborate | ETD-3000 | |
| Materials | |||
| mica(001) sheets | Nilaco corporation | 990066 | |
| conductive silver paint | Ted Pella, INC | No.16033 | |
| CoFe2O4 target | Kurt J.Lesker | ||
| SrRuO3 target | Kurt J.Lesker | ||
| PbZr0.2Ti0.8O3 target | Kurt J.Lesker | ||
| Pt target | Hefei Ke jing |
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