Deep brain stimulation (DBS) is an established therapy for movement disorders such as essential tremor1 and Parkinson's disease2. This therapy is also being investigated as a potential treatment for a growing number of disorders including traumatic brain injury3, Tourette's syndrome4, and depression5. DBS systems require surgical implantation of an electrode lead to deliver stimulation in a localized brain region to modulate ongoing neural activity6. The location of the electrodes and the stimulation parameters both have an effect on modulating neuronal circuits that provide therapeutic benefit. Small variations in location can affect the therapeutic window, possibly increasing the likelihood of adverse side-effects before therapeutic benefit is achieved7,8,9. In practice, it is often difficult to predict the effects stimulation will have on neural activity; consequently, this window of therapeutic benefit is identified on a patient-by-patient basis as the stimulation device is programmed by the clinician8,9. This process is becoming more complex as new generations of DBS devices become available. For example, novel lead designs are being introduced with more contacts10,11,12, and in some cases multiple leads are being implanted in close proximity to one another13. Hence, there is a need to be able to explore and predict the effects of DBS across a large and growing parameter space.
Computational modeling and analysis can be used to predict the physiological and clinical effects of DBS on a patient-specific basis. These models use finite element modeling (FEM) to build three dimensional representations of the brain tissue and the biophysical characteristics of the implanted electrode. FEM bioelectric field models have been successfully used to predict the effects of DBS14, but until now these have been time-consuming and computationally costly to generate. There is a need for novel modeling techniques to keep pace with the growing complexity of DBS devices. These patient-specific models should provide near real-time visual feedback on the effects of DBS as the lead location or stimulation parameters are changed. The user would obtain feedback about a lead location and stimulation setting in a few seconds, enabling continued refinement of lead placement over the course of several minutes. Patient-specificity is achieved by incorporating the patient's anatomy, their brain's shape and size, when building the FEM and applying the biophysical properties of their brain, such as anisotropic tissue conductivity. Anisotropic conductivity describes how current will spread through different brain regions and can be non-invasively measured for the entire brain similar to a typical magnetic resonance image (MRI).
DBS modeling approaches that do not use patient-specific information can provide fast, but less accurate predictions of stimulation effects, due to generalized geometries and conductivity values for brain tissue. In this approach, a single FEM is used for all patients and the predicted neural activity can be computed in advance. Patient-specific models cannot be generalized and pre-computed since a new FEM is built for each individual. These models require more effort to build but can be more accurate. Several factors limit the speed at which these models can be built and used: 1) Modifying parameters at the beginning of the model building pipeline, such as electrode position, requires manual effort to update all of the subsequent steps; and 2) The steps in the modeling pipeline are not easily integrated with one another, requiring the passing of data between multiple software packages. Often, we want to evaluate many different situations such as electrode position, stimulation parameters, or electrode designs. To provide meaningful feedback about the effect these changes have on the therapeutic effect the patient will receive, these results should be both accurate and generated quickly.
Our goal is to present new techniques for building patient-specific models that take advantage of the speed obtained in generalized models and automating many of the pipeline steps to create an interactive modeling environment that provides near real-time visual feedback about the effects of DBS. An interactive simulation allows a user to test predictions and obtain results quickly without focusing on details of model construction. This is beneficial when there is a large parameter space to explore and how these parameters influence the simulation are uncertain. We will describe the steps in the processing pipeline to generate interactive, patient-specific FEM models from magnetic resonance imaging (MRI) acquisitions. Utilizing the tools and techniques outlined in this paper will reduce the time cost for creating FEM bioelectric field models and provide a way to make these models accessible to researchers and clinicians who are not modeling experts.
This protocol describes how to build a patient-specific finite element model from acquired MRI volumes, and then simulate the electric field induced by a DBS electrode. The main steps in the creation of these models are to: 1) build a finite element model (FEM) representing the patient's brain and the implanted electrode, 2) add biophysical properties of the brain and stimulation parameters of the DBS device to the FEM, and 3) solve for the voltage generated by the electrode in the model. Two imaging modalities are needed to build a patient specific model for DBS simulation. A T1 MRI is used to construct segmentations of the brain surface, ventricles, and specific nuclei. Diffusion weighted imaging (DWI), a measure of water diffusivity, is used to estimate diffusion tensors throughout the brain tissue15. The diffusion tensors are converted into conductivity tensors which quantify the inhomogeneous, anisotropic biophysical properties of the tissue on a voxel by voxel basis16. The voltage distribution throughout the brain induced by the electrode is computed by solving the Poisson equation, which through the application of FEM simplifies to a linear system of equations Ax = b where A is a stiffness matrix that represents the conductivity and geometry of the mesh, x is the voltage solution at each node in the mesh, and b is modified based upon boundary conditions and current sources.