
Memristors and transistors are pivotal components in modern electronics, offering transformative potential in fields ranging from neuromorphic computing to advanced memory storage systems. While significant progress has been made in their fabrication and characterization, challenges remain in optimizing device performance, integrating these components at the nanoscale, and understanding their operational dynamics under varying conditions. Furthermore, the development of novel materials and innovative architectures continues to push the boundaries of what these devices can achieve in both conventional and emerging applications.
This collection aims to provide a comprehensive platform for the dissemination of advanced methodologies and original research findings related to the fabrication, characterization, and application of memristors and transistors. Contributions will encompass a broad spectrum of innovative approaches, encouraging work that addresses existing challenges, explores emerging trends, and proposes novel solutions in the field.
By consolidating diverse methodologies and research findings, this collection will serve as a valuable resource for researchers, engineers, and industry professionals aiming to stay abreast of the latest advancements and challenges in the field. It will foster knowledge exchange and facilitate the adoption of innovative techniques, ultimately advancing the development of next-generation electronic devices with improved performance and functionality.
Polarization Coulomb field scattering in AlGaN/GaN HFETs
Zhaojun Lin*1
1Shandong University
MEMRISTOR BASED ALU IMPLEMENTATION USING THE VTEAM MODEL
Vetriveeran Rajamani*1
1Vellore Institute of Technology, Vellore
Real-time continuous measurement-based extended gate field effect transistor sensors
Manobin Sharma1,
Drew Shimp1,
Jonathan Bunn1,
Dongmei Dong*1
1Rowan University