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JoVE Journal Engineering
Plasma-assisteret Molecular Beam Epitaxy af N-polar InAlN-barriere High-elektron-mobilitet Transistorer
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Plasma-assisteret Molecular Beam Epitaxy af N-polar InAlN-barriere High-elektron-mobilitet Transistorer

Article DOI: 10.3791/54775-v • 10:31 min • November 24th, 2016
November 24th, 2016 •
1, 2, 2, 2, 2, 2
1NRC Postdoctoral Scholar, Naval Research Laboratory, 2Electronics Science and Technology Division, Naval Research Laboratory

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Molekylær stråle epitaksi anvendes til at vokse N-polære InAlN-barriere høj elektron-mobilitet transistorer (HEMTs). Kontrol af wafer forberedelse, lag vækst betingelser og epitaksial struktur resulterer i glatte, deres sammensætning homogene InAlN lag og HEMTs med mobilitet så højt som 1.750 cm 2 / V ∙ sek.

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Engineering Molekylær stråle epitaxy Gan III-nitrider InAlN high-elektron-mobilitet transistorer halvleder vækst
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