Aluminum Nitride Interlayer

An aluminum nitride interlayer is a thin layer of AlN placed between dissimilar materials to improve thermal, electrical, or mechanical performance at their interface. Its high thermal conductivity transfers heat away from active components, while its electrical insulation and relatively compatible thermal expansion help limit current leakage, thermal resistance, and stress caused by temperature changes. In engineering, aluminum nitride interlayers support semiconductor packaging, power electronics, light-emitting devices, and other systems that require efficient heat dissipation without sacrificing dielectric isolation. Their effectiveness depends on layer thickness, interface quality, deposition method, and compatibility with neighboring materials.

Aluminum Nitride Interlayer - Related Videos

Research

JoVE Journal - Engineering

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

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Cited by 1 •

2025

This article traces the life cycle of a silicon nitride membrane resonator, from design through fabrication to characterization.

Research

JoVE Journal - Chemistry
Free Sample

Low-energy Cathodoluminescence for (Oxy)Nitride Phosphors

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Cited by 2 •

2016

An excellent chemical and luminescence stabilities of (oxy)nitride phosphors present it as an promising alternative to currently used sulfide and oxide phosphors. In this paper, we present the way to investigate its local luminescence properties using low-energy cathodoluminescence (CL).

Casting Protocols for the Production of Open Cell Aluminum Foams by the Replication Technique and the Effect on Porosity

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Cited by 22 •

2014

Replication is one of the processing techniques used for the production of porous metal sponges. In this paper one implementation of the method for the production of open celled porous aluminum is shown in detail.

Education

JoVE Science Education - Engineering

Stress-Strain Characteristics of Aluminum

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2023

Source: Roberto Leon, Department of Civil and Environmental Engineering, Virginia Tech, Blacksburg, VA Aluminum is one of the most abundant materials in our lives, as it is omnipresent in everything from soda cans to airplane components. Its widespread use is relatively recent (1900AD), primarily because aluminum does not occur in its free state, but rather in combination with oxygen and other elements, often in the form of Al2O3. Aluminum was originally obtained from bauxite mineral deposits...

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

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Cited by 2 •

2016

Molecular beam epitaxy is used to grow N-polar InAlN-barrier high-electron-mobility transistors (HEMTs). Control of the wafer preparation, layer growth conditions and epitaxial structure results in smooth, compositionally homogeneous InAlN layers and HEMTs with mobility as high as 1,750 cm2/V∙sec.

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