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Engineering
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電解質ゲートによって WS
2
ナノデバイスにおける電子状態の電界制御
JoVE Journal
Engineering
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JoVE Journal
Engineering
Electric-field Control of Electronic States in WS
2
Nanodevices by Electrolyte Gating
Please note that all translations are automatically generated.
Click here for the English version.
電解質ゲートによって WS
2
ナノデバイスにおける電子状態の電界制御
DOI:
10.3791/56862-v
•
10:36 min
•
April 12, 2018
•
Feng Qin
,
Toshiya Ideue
,
Wu Shi
,
Yijin Zhang
4
,
Ryuji Suzuki
,
Masaro Yoshida
,
Yu Saito
,
Yoshihiro Iwasa
5
1
Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics
,
The University of Tokyo
,
2
Materials Sciences Division
,
Lawrence Berkeley National Laboratory
,
3
Institute of Scientific and Industrial Research
,
Osaka University
,
4
Max Planck Institute for Solid State Research
,
5
RIKEN Center for Emergent Matter Science (CEMS)
Chapters
00:04
Title
00:38
Dispersion of WS
2
Nanotubes (NTs) on a Si/SiO
2
Substrate
01:35
Application of WS
2
Flakes to a Si/SiO
2
Substrate with the Tape Method
02:28
Device Fabrication by Electron Beam Lithography
05:59
Electrode Deposition
07:17
Device Completion and Transport Measurements
08:31
Results: Transistor Operations of WS
2
Nanotube and Flake Devices
09:56
Conclusion
Summary
Automatic Translation
English (Original)
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Automatic Translation
ここでは、電解質を用いた固体キャリア数を制御するためのプロトコルを提案する.
Tags
Electric-field Control
Electronic States
WS2 Nanodevices
Electrolyte Gating
Quantum Phase Transitions
Electric-field-induced Superconductivity
Tungsten Disulfide Nanotubes
Tungsten Disulfide Flakes
PMMA Coating
Spin-coating
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