Sidewall Patterning
Sidewall Patterning - Related Videos
13:53
The Helsinki Rat Microsurgical Sidewall Aneurysm Model
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Cited by 21 •
2014
Microsurgical sidewall aneurysms in rats are created by end-to-side anastomosis of an aortic graft to the abdominal aorta. We present step-by-step instructions and discuss anatomical and surgical details for successful experimental saccular aneurysm creation.
10:39
Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls
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2018
A microfluidic channel with deformable sidewalls offers flow control, particle handling, channel dimension customization and other reconfigurations while in use. We describe a method for fabricating a microfluidic channel with sidewalls made of an array of pins that allows their shape to change.
09:24
Micropunching Lithography for Generating Micro- and Submicron-patterns on Polymer Substrates
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Cited by 1 •
2012
A micropunching lithography approach is developed to generate micro- and submicron-patterns on top, sidewall and bottom surfaces of polymer substrates. It overcomes the obstacles of patterning conducting polymers and generating sidewall patterns. This method allows rapid fabrication of multiple features and is free of aggressive chemistry.
13:18
Understanding Cerebellar Pattern Formation
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2007
13:51
Cross-Modal Multivariate Pattern Analysis
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Cited by 5 •
2011
Classical multivariate pattern analysis predicts sensory stimuli a subject perceives from neural activity in the corresponding cortices (e.g. visual stimuli from activity in visual cortex). Here, we apply pattern analysis cross-modally and show that sound- and touch-implying visual stimuli can be predicted from activity in auditory and somatosensory cortices, respectively.
FAQs
Film thickness establishes the amount of material available to form a sidewall feature, while etch direction determines where material remains or is removed. A more controlled combination can tune feature width, profile, spacing, and alignment. These parameters are especially important when the intended structure must follow a three-dimensional geometry rather than a planar surface.
Conformal deposition or coating can cover vertical and near-vertical surfaces, creating a continuous material layer on the sidewall. Subsequent directional etching can selectively remove portions of that layer, leaving a controlled spacer or patterned region. This sequence provides a way to define structures from the existing three-dimensional feature instead of relying only on a top-surface pattern.
Mask placement determines which regions are protected during etching and which remain exposed to material removal. On a three-dimensional feature, even small changes in mask position can affect sidewall width, spacing, and alignment relative to the trench or channel. Careful placement therefore helps preserve the intended geometry and supports repeatable pattern transfer.
A typical workflow begins with a trench, channel, or other three-dimensional feature, followed by conformal material deposition or coating. Engineers then apply lithographic masking, directional etching, or spacer formation to selectively retain or remove sidewall material. Adjusting film thickness and process conditions during these stages controls the resulting profile, dimensions, and alignment.
Sidewall patterning supports semiconductor devices, MEMS, optical structures, and microfluidic systems. In each case, the patterned surface can contribute to a different design objective, such as electrical isolation, optical behavior, fluid transport, or overall device geometry. Its value is greatest when performance depends on accurately engineered three-dimensional architecture rather than only on planar features.
Engineers can tune feature width, profile, spacing, and alignment by varying film thickness, etch direction, mask placement, and process conditions. These geometric outcomes can influence electrical isolation, fluid transport, optical behavior, and the broader architecture of a device. The technique is therefore useful when fabrication requirements extend to vertical surfaces and other nonplanar regions.