Vertically Aligned Nanowires

Vertically aligned nanowires are nanoscale, high-aspect-ratio structures arranged approximately perpendicular to a supporting surface, combining large surface area with directional electrical, optical, and mechanical properties. They are typically formed as ordered arrays through processes such as vapor–liquid–solid growth, chemical vapor deposition, or electrodeposition, in which nucleation at defined sites and controlled axial growth determine wire diameter, spacing, length, and alignment. In engineering, these arrays support compact sensors, photovoltaic and photoelectrochemical devices, field emitters, batteries, and advanced transistors. Their performance depends strongly on surface chemistry, interface quality, material composition, and uniformity across the array.

Vertically Aligned Nanowires - Related Videos

Research

JoVE Journal - Engineering

Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates

0 Views •

Cited by 3 •

2013

We report a simple method for fabricating an ultrahigh density array of vertically ordered small-molecular organic nanowires. This method allows for synthesis of complex heterostructured hybrid nanowire geometries, which can be inexpensively grown on arbitrary substrates. These structures have potential applications in organic electronics, optoelectronics, chemical sensing, photovoltaics and spintronics.

Well-aligned Vertically Oriented ZnO Nanorod Arrays and their Application in Inverted Small Molecule Solar Cells

0 Views •

Cited by 7 •

2018

This manuscript describes how to design and fabricate efficient inverted SMPV1:PC71BM solar cells with ZnO nanorods (NRs) grown on a high quality Al-doped ZnO (AZO) seed layer. The well-aligned vertically oriented ZnO NRs exhibit high crystalline properties. The power conversion efficiency of solar cells can reach 6.01%.

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

0 Views •

Cited by 1 •

2013

Silver nanowires can simultaneously transport electrons and optical information in the form of surface plasmons. A procedure is described here to realize such a shared circuitry and the limitations at propagating both information carriers are evaluated.

Analysis of Contact Interfaces for Single GaN Nanowire Devices

0 Views •

Cited by 1 •

2013

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

0 Views •

Cited by 9 •

2013

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

View All Results

FAQs

Related Topics