Analysis of Contact Interfaces for Single GaN Nanowire Devices

The overall goal of this procedure is to allow for the examination and characterization of the contact substrate and contact nanowire interfaces for single gallium nitride nanowire devices. This is accomplished by first preparing a nanowire suspension and dispersing it onto a substrate. The second step is to deposit the nickel gold contacts on the nanowires and then a kneel the sample.

The final step is to remove the anal to nickel gold contacts from the substrate by adhering them to carbon tape. Ultimately, a scanning electron microscope is used to examine the contact interfaces for void formation. This method can help answer questions about how to process semiconductor nanowires.