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Analysis of Contact Interfaces for Single GaN Nanowire Devices
 

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Article DOI: 10.3791/50738
November 15th, 2013

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Summary November 15th, 2013

A technique was developed that removes Ni/Au contact metal films from their substrate to allow for the examination and characterization of the contact/substrate and contact/NW interfaces of single GaN nanowire devices.

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