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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
 

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Article DOI: 10.3791/50770
December 2nd, 2013

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Summary December 2nd, 2013

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

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