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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
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JoVE Journal Engineering
Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

DOI:
10.3791/50770-v

•

09:45 min

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December 02, 2013

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, , , ,
1Institute of Chemistry,The Hebrew University of Jerusalem, 2Center for Nanoscience and Nanotechnology,The Hebrew University of Jerusalem

Chapters

  • 00:05Title
  • 01:32Surface Cleaning
  • 02:50Monolayer Formation
  • 03:43Nanowire Synthesis
  • 05:02Nanowire Drop-casting onto Substrate and Rapid Thermal Anneal
  • 06:24Sheet Resistance Measurements, Nanowire Device Fabrication and Characterization
  • 08:03Results: Sheet Resistance Measurements and Nanowire FET I-V Curves Using Monolayer Contact Doped Materials
  • 09:08Conclusion

Summary

Automatic Translation

Automatic Translation

A detailed procedure for surface doping of Silicon interfaces is provided. The ultra-shallow surface doping is demonstrated by using phosphorus containing monolayers and rapid annealing process. The method can be used for doping of macroscopic area surfaces as well as nanostructures.

Tags

Keywords: Monolayer Contact DopingSilicon SurfacesSilicon NanowiresOrganophosphorus CompoundsUltra-shallow Doping ProfilesTetraethyl MethylenediphosphonateVapor-liquid-solid (VLS) MechanismNanowire Field-effect Transistor (NW-FET)

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