Indium Gallium Arsenide
Indium Gallium Arsenide - Related Videos
26:16
Patterning Cells on Optically Transparent Indium Tin Oxide Electrodes
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Cited by 1 •
2007
Non-fouling PEG silane monolayer was desorbed from individually addressable ITO electrodes on glass by application of a reductive potential. Electrochemical stripping of PEG-silane layer from ITO microelectrodes allowed for cell adhesion to take place in a spatially defined fashion, with cellular patterns corresponding closely to electrode patterns.
09:00
An In Vitro Enzymatic Assay to Measure Transcription Inhibition by Gallium(III) and H3 5,10,15-tris(pentafluorophenyl)corroles
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Cited by 1 •
2015
Gallium(III) 5,10,15-(tris)pentafluorophenylcorrole and its freebase analogue exhibit low micromolar cell cytotoxicity. This manuscript describes an RNA transcription reaction, imaging RNA with an ethidium bromide-stained gel, and quantifying RNA with UV-Vis spectroscopy, in order to assess transcription inhibition by corroles and demonstrates a straightforward method of evaluating anticancer candidate properties.
10:45
Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
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2025
This protocol describes the fabrication of a one-piece indium-tin-oxide (ITO)-based ion-sensitive field-effect transistor (ISFET), which can be constructed as a solution-gated FET sensor (e.g., pH sensor) using a short and simple process (approximately half a day). This one-piece ITO-ISFET can also be applied to biosensing.
11:02
A Functional Assay for Gap Junctional Examination; Electroporation of Adherent Cells on Indium-Tin Oxide
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Cited by 3 •
2014
This presentation demonstrates a method whereby electroporation of adherent, cultured cells is used for the study of intercellular, junctional communication, while the cells grow on a slide coated with conductive and transparent indium-tin oxide.
15:58
Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
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Cited by 3 •
2013
The technique of femtosecond four-wave mixing is described, including spectrally-resolved and time-resolved configurations. We illustrate the utility of this technique for the investigation of crucial physical properties in the III-V diluted magnetic semiconductors, afforded by its nonlinearity and high temporal resolution.
FAQs
Adjusting the indium-to-gallium ratio changes both the bandgap and lattice constant, which in turn changes the wavelengths the alloy can absorb. This tunability allows engineers to align material composition with a desired infrared operating range, but the same composition choice also affects how the layer fits a selected substrate during device fabrication.
High electron mobility is important because it helps carriers respond efficiently when an electric field is applied. InGaAs devices use this property to support high-speed electronic and photonic operation, while photodetectors use the field to move photo-generated carriers toward contacts. The resulting design value is faster signal handling in infrared detection and optical communication.
Compared with either constituent compound considered separately, the alloy offers composition-dependent control over bandgap, lattice constant, and optical absorption wavelength. That tunability gives engineers more than a single fixed material response, while still requiring attention to substrate matching and epitaxial growth during device integration steps.
They determine whether the InGaAs layer can be incorporated appropriately into a device structure. Since alloy composition affects the lattice constant, material selection must be considered alongside the substrate and the chosen growth approach. These engineering decisions are especially relevant when designing devices that depend on controlled infrared absorption or high-speed electronic and photonic behavior.
Strong infrared response makes InGaAs relevant to short-wave infrared imaging, spectroscopy, and lidar, where devices must interact with infrared signals. Its high-speed device compatibility also supports fiber-optic communications. The material additionally appears in specialized solar cells, showing that its engineering value extends from sensing and communication to energy-related devices.
Fiber-optic communication draws on two relevant attributes: strong infrared response and compatibility with high-speed electronic and photonic devices. Together, these characteristics make InGaAs relevant to systems handling infrared optical signals at high speed. This application sits alongside short-wave infrared imaging, spectroscopy, lidar, and specialized solar cells.