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Grafen-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrat for Ultraviolet Light Emitting Diodes

Article DOI: 10.3791/60167-v • 07:00 min • June 25th, 2020
June 25th, 2020 •
*1,2, *3, 1,2, 1,2, 2,4, 1,2, 5, 1,2
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, 3Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 5Electron Microscopy Laboratory, School of Physics, Peking University
* These authors contributed equally

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Summary
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Ett protokoll för grafen-assisted tillväxt av högkvalitativa AlN filmer på nano-mönstrade safir substrat presenteras.

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Engineering grafen MOCVD AlN ultraviolett ljus avger dioder van der Waals epitaxy nano-mönstrade safirsubstrat
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