<em>In Situ</em> Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Zhongquan Liao; Martin Gall; Kong Boon Yeap; Christoph Sander; Andr&#233; Clausner; Uwe M&#252;hle; J&#252;rgen Gluch; Yvonne Standke; Oliver Aubel; Armand Beyer; Meike Hauschildt; Ehrenfried Zschech

doi:10.3791/52447

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Em ruptura dielétrica Situ dependentes do tempo no Microscópio Eletrônico de Transmissão: A possibilidade de compreender o mecanismo de falha em dispositivos microeletrônicos

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In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

Em ruptura dielétrica Situ dependentes do tempo no Microscópio Eletrônico de Transmissão: A possibilidade de compreender o mecanismo de falha em dispositivos microeletrônicos

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8,635 Views

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09:26 min

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June 26, 2015

DOI:

10.3791/52447-v

DOI:

10.3791/52447-v

•

09:26 min

June 26, 2015

•

3 Views

Zhongquan Liao^1,2, Martin Gall¹, Kong Boon Yeap^1,3, Christoph Sander¹, André Clausner¹, Uwe Mühle¹, Jürgen Gluch¹, Yvonne Standke¹, Oliver Aubel⁴, Armand Beyer⁴, Meike Hauschildt⁴, Ehrenfried Zschech^1,2

¹Fraunhofer Institute for Ceramic Technologies and Systems, ²Dresden Center for Nanoanalysis,Technische Universität Dresden, ³Globalfoundries Fab 8, ⁴Globalfoundries Fab 1

Summary

The time-dependent dielectric breakdown (TDDB) in on-chip interconnect stacks is one of the most critical failure mechanisms for microelectronic devices. This paper demonstrates the procedure of an in situ TDDB experiment in the transmission electron microscope, which opens a possibility to study the failure mechanism in microelectronic products.