Field Effect Transistors

Field effect transistors (FETs) are semiconductor devices that control electrical current using an electric field, making them fundamental to modern electronic circuits. A voltage applied to the gate changes the conductivity of a channel between the source and drain terminals by attracting or repelling charge carriers; in metal-oxide-semiconductor FETs, an insulating layer separates the gate from the channel and enables high input impedance. FETs operate as switches or amplifiers in digital logic, memory, power electronics, sensors, and signal-processing systems. Their low gate current, scalability, and efficient operation have supported the development of integrated circuits and increasingly compact electronic technologies.

Field Effect Transistors - Related Videos

Education

JoVE Core - Electrical Engineering

Field Effect Transistor

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2024

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Research

JoVE Journal - Bioengineering

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

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Cited by 4 •

2016

We describe key steps for biosensing by using polysilicon nanowire field-effect transistors, including the preparation of the device and the immobilization and confirmation of a DNA molecular probe on the nanowire surface, as well as conditions for DNA sensing.

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

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Cited by 1 •

2016

This manuscript describes the bending process of an organic single crystal-based field-effect transistor to maintain a functioning device for electronic property measurement. The results suggest that bending causes changes in the molecular spacing in the crystal and thus in the charge hopping rate, which is important in flexible electronics.

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

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Cited by 2 •

2022

The present protocol demonstrates the development of electrolyte-gated graphene field-effect transistor (EGGFET) biosensor and its application in biomarker immunoglobulin G (IgG) detection.

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

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Cited by 5 •

2014

The Organic Electrochemical Transistor is integrated with live cells and used to monitor ion flux across the gastrointestinal epithelial barrier. In this study, an increase in ion flux, related to disruption of tight junctions, induced by the presence of the calcium chelator EGTA (ethylene glycol-bis(beta-aminoethyl ether)-N,N,N',N'-tetra acetic acid), is measured.

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