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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

DOI:
10.3791/54651-v

•

08:43 min

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November 07, 2016

•

,
1Institution of Chemistry,Academia Sinica, 2Department of Chemistry,National Central University

Chapters

  • 00:05Title
  • 00:43Grow Single Crystals of TCDAP Using a Physical Vapor Transfer (PVT) System
  • 01:43Device Fabrication
  • 04:09Measure the Performance of the Device and Bending Experiments
  • 05:32Results: Measuring Properties of Bent Organic Electronic Devices
  • 06:38Conclusion

Summary

Automatic Translation

Automatic Translation

This manuscript describes the bending process of an organic single crystal-based field-effect transistor to maintain a functioning device for electronic property measurement. The results suggest that bending causes changes in the molecular spacing in the crystal and thus in the charge hopping rate, which is important in flexible electronics.

Tags

Keywords: Organic Single CrystalField-effect TransistorsBendingElectrical CharacteristicsFlexible ElectronicsTCDAPPET SubstrateGraphite ContactsDielectric InsulatorParacyclophane

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