Pulsed Laser Deposition (PLD) employs laser ablation of a solid target which results in the formation of a plasma of ablated species which can be deposited on a substrate to grow a film (see Figure 1) 1. Interaction with a background atmosphere (inert or reactive) can be used to induce homogeneous cluster nucleation in the gas phase (see Figure 2) 2,3. Our strategy for material synthesis by PLD is based on the tuning of material properties in a bottom-up approach by carefully controlling the plasma dynamics generated in the PLD process. Cluster size, kinetic energy and composition can be varied by a proper setting of deposition parameters which affect film growth and result in morphological and structural changes 4,5. By exploiting the method described here we demonstrated, for a number of oxides (e.g. WO3, Ag4O4, Al2O3 and TiO2), the capability to tune morphology, density, porosity, degree of structural order, stoichiometry and phase by modifying the material structure at the nanoscale 6-11. This allows the design of materials for specific applications 12-16. With reference to photovoltaic applications, we synthesized nanostructured TiO2 hierarchically organized by assembling nanoparticles (<10 nm) in a nano- and mesostructure that resembles a 'forest of trees' 13 showing interesting results when employed as photoanodes in dye sensitized solar cells (DSSC) 17. Based on these previous results we describe the protocol for the deposition of Al-doped ZnO (AZO) films as a transparent conducting oxide.
Transparent conducting oxides (TCOs) are high bandgap (>3 eV) materials converted into conductors by heavy doping, displaying resistivity <10-3 ohm-cm and more than 80% optical transmittance in the visible range. They are a key element for many applications such as touch screens and solar cells 18-21 and they are typically grown by different techniques such as sputtering, pulsed laser deposition, chemical vapour deposition, spray pyrolysis and with solution-based chemical methods. Among TCOs, indium-tin-oxide (ITO) has been widely studied for its low resistivity but suffers from the drawback of the high cost and low availability of indium. Research is now moving towards indium-free systems such as F-doped SnO2 (FTO), Al-doped ZnO (AZO) and F-doped ZnO (FZO).
Electrodes capable of providing an intelligent management of the incident light (light trapping) are particularly interesting for photovoltaic applications. To exploit the possibility to scatter visible light via structures and morphologies modulated at a scale comparable to the wavelength of light (e.g. 300-1,000 nm), a good control on the film morphology and on cluster assembly architectures is needed.
In particular we describe how to tune morphology and structure of AZO films. Compact AZO deposited at low pressure (2 Pa oxygen) and at room temperature is characterized by low resistivity (4.5 x 10-4 ohm cm) and visible light transparency (> 90%) which is competitive with AZO deposited at high temperatures, while AZO hierarchical structures are obtained by ablating at O2 pressures above 100 Pa. These structures display a strong light scattering capability with haze factor up to 80% and more 22,23.