Waiting
Login processing...

Trial ends in Request Full Access Tell Your Colleague About Jove
Journal / Engineering / Omfattende karakterisering af Extended Fejl i…
JoVE Journal
Engineering

This content is Open Access.

JoVE Journal Engineering
Omfattende karakterisering af Extended Fejl i Semiconductor Materials af en Scanning Electron Microscope
High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia (YSZ) Scaffolds by In Situ Carbon Templating Xerogels
Journal (Engineering)
High Temperature Fabrication of Nanostructured Yttria-Stabilized-Zirconia (YSZ) Scaffolds by In Situ Carbon Templating Xerogels
Atomically Traceable Nanostructure Fabrication
Journal (Engineering)
Atomically Traceable Nanostructure Fabrication
 
Click here for the English version

Omfattende karakterisering af Extended Fejl i Semiconductor Materials af en Scanning Electron Microscope

Article DOI: 10.3791/53872-v • 11:14 min • May 28th, 2016
May 28th, 2016 •
1, 1, 1, 1, 2, 2, 1
1Institute of Applied Physics, Semiconductor Physics, Technische Universität Dresden, 2Institut für Strukturphysik, Technische Universität Dresden

Chapters

Tags

Engineering scanningselektronmikroskop (SEM) silicium cathodoluminescence (CL) elektronstråle induceret strøm (EBIC) krydskorrelation elektron tilbagekastning diffraktion (ccEBSD) dislokationer korngrænser D-line luminescens
Read Article

Get cutting-edge science videos from JoVE sent straight to your inbox every month.

Waiting X
Simple Hit Counter