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JoVE Journal Engineering
Caratterizzazione completa dei difetti estesi in materiali semiconduttori da un microscopio elettronico a scansione
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Caratterizzazione completa dei difetti estesi in materiali semiconduttori da un microscopio elettronico a scansione

Article DOI: 10.3791/53872-v • 11:14 min • May 28th, 2016
May 28th, 2016 •
1, 1, 1, 1, 2, 2, 1
1Institute of Applied Physics, Semiconductor Physics, Technische Universität Dresden, 2Institut für Strukturphysik, Technische Universität Dresden

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Ingegneria microscopio elettronico a scansione (SEM) silicio catodoluminescenza (CL) fascio di elettroni corrente indotta (EBIC) cross-correlazione backscatter diffrazione di elettroni (ccEBSD) dislocazioni bordi di grano D-line luminescenza
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