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厚度均匀葛电沉积<sub> 23</sub>锑<sub> 7</sub>取值<sub> 70</sub>和As<sub> 40</sub>取值<sub> 60</sub>硫系玻璃薄膜
Electrospray Deposition of Uniform Thickness Ge<sub>23</sub>Sb<sub>7</sub>S<sub>70</sub> and As<sub>40</sub>S<sub>60</sub> Chalcogenide Glass Films
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工程学
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JoVE 杂志 工程学
Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films

厚度均匀葛电沉积<sub> 23</sub>锑<sub> 7</sub>取值<sub> 70</sub>和As<sub> 40</sub>取值<sub> 60</sub>硫系玻璃薄膜

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08:38 min

August 19, 2016

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08:38 min
August 19, 2016

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Summary

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A method of uniform thickness solution-derived chalcogenide glass film deposition is demonstrated using computer numerical controlled motion of a single-nozzle electrospray.

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