Gallium Corrole

Gallium corrole is a synthetic coordination compound in which a gallium ion is held within a corrole macrocycle, a nitrogen-rich, ring-shaped ligand related to porphyrins. Its properties arise from metal–ligand coordination: the corrole framework stabilizes gallium, while its conjugated structure governs light absorption, electronic behavior, and interactions with surrounding molecules. In bioengineering, these compounds provide tunable platforms for studying molecular recognition, imaging, and light-activated biological processes. Their adjustable substituents may support the design of biological probes or therapeutic materials, although performance depends on solubility, cellular compatibility, and delivery to the intended biological target.

Gallium Corrole - Related Videos

Research

JoVE Journal - Bioengineering

An In Vitro Enzymatic Assay to Measure Transcription Inhibition by Gallium(III) and H3 5,10,15-tris(pentafluorophenyl)corroles

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Cited by 1 •

2015

Gallium(III) 5,10,15-(tris)pentafluorophenylcorrole and its freebase analogue exhibit low micromolar cell cytotoxicity. This manuscript describes an RNA transcription reaction, imaging RNA with an ethidium bromide-stained gel, and quantifying RNA with UV-Vis spectroscopy, in order to assess transcription inhibition by corroles and demonstrates a straightforward method of evaluating anticancer candidate properties.

Development of a 68Gallium-Labeled D-Peptide PET Tracer for Imaging Programmed Death-Ligand 1 Expression

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Cited by 6 •

2023

This study developed a noninvasive and real-time method to evaluate the distribution of programmed death-ligand 1 in the whole body, based on positron emission tomographic imaging of [68Ga] D-dodecapeptide antagonist. This technique has advantages over conventional immunohistochemistry and improves the efficiency of identifying appropriate patients who will benefit from immune checkpoint blockade therapy.

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

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Cited by 2 •

2016

Molecular beam epitaxy is used to grow N-polar InAlN-barrier high-electron-mobility transistors (HEMTs). Control of the wafer preparation, layer growth conditions and epitaxial structure results in smooth, compositionally homogeneous InAlN layers and HEMTs with mobility as high as 1,750 cm2/V∙sec.

Research

JoVE Journal - Engineering
Free Sample

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing

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Cited by 3 •

2013

The technique of femtosecond four-wave mixing is described, including spectrally-resolved and time-resolved configurations. We illustrate the utility of this technique for the investigation of crucial physical properties in the III-V diluted magnetic semiconductors, afforded by its nonlinearity and high temporal resolution.

Investigations on the Ga(III) Complex of EOB-DTPA and Its 68Ga Radiolabeled Analogue

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Cited by 2 •

2016

A procedure for the isolation of EOB-DTPA and subsequent complexation with natural Ga(III) and 68Ga is presented herein, as well as a thorough analysis of all compounds and investigations on labeling efficiency, in vitro stability and the n-octanol/water distribution coefficient of the radiolabeled complex.

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