Backscattered Electron Imaging

Backscattered electron imaging is a scanning electron microscopy technique that reveals compositional and structural differences by detecting electrons scattered back from a specimen, making it valuable in chemical and materials analysis. A focused electron beam interacts elastically with atoms, and a detector measures the high-energy electrons that return; regions containing elements with higher atomic numbers generally produce stronger signals and appear brighter. This atomic-number contrast helps researchers distinguish phases, inclusions, particles, and compositional domains in solids. In chemistry, the method supports analysis of catalysts, minerals, alloys, ceramics, and geological samples, often alongside elemental techniques such as energy-dispersive X-ray spectroscopy.

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Research

JoVE EoE - Neuroimaging

Imaging of Neuronal Mitochondria Using a Serial Block-Face Scanning Electron Microscope

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2025

Source: Mukherjee, K., et. al. Analysis of Brain Mitochondria Using Serial Block-Face Scanning Electron Microscopy. J. Vis. Exp. (2016)This video demonstrates the preparation, imaging, and analysis of mouse brain tissue using a serial block-face scanning electron microscope (SBFSEM) to visualize mitochondrial ultrastructure, enabling precise mapping of their morphology and spatial distribution in axonal and dendritic neuronal compartments.

Education

JoVE Science Education - Chemistry

Scanning Electron Microscopy (SEM)

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2023

Source: Laboratory of Dr. Andrew J. Steckl — University of Cincinnati A scanning electron microscope, or SEM, is a powerful microscope that uses electrons to form an image. It allows for imaging of conductive samples at magnifications that cannot be achieved using traditional microscopes. Modern light microscopes can achieve a magnification of ~1,000X, while typical SEM can reach magnifications of more than 30,000X. Because the SEM doesn’t use light to create images, the resulting pictures it...

Research

JoVE Journal - Engineering
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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Cited by 4 •

2016

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

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Cited by 22 •

2015

The use of electron channeling contrast imaging in a scanning electron microscope to characterize defects in III-V/Si heteroexpitaxial thin films is described. This method yields similar results to plan-view transmission electron microscopy, but in significantly less time due to lack of required sample preparation.

Electron Microscopic Analysis of Myelin Damage in a Rat Model of Optic Nerve Injury

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2025

The control section exhibits axons with tightly packed myelin sheaths containing concentric plasma membrane layers. The injured section exhibits decompacted myelin with large gaps.

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