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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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JoVE Journal Engineering
Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

DOI:
10.3791/52745-v

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07:50 min

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July 17, 2015

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, , , ,
1Department of Materials Science and Engineering,The Ohio State University, 2Department of Electrical and Computer Engineering,The Ohio State University, 3Institute of Materials Research,The Ohio State University

Chapters

  • 00:05Title
  • 02:03GaP/Si Sample Loading
  • 02:51Set up of Appropriate Working Conditions
  • 03:46Visualization of the Sample’s Electron Channeling Patterns
  • 04:35Imaging of Defects and Features
  • 06:13Results: Imaging Clearly Shows the Misfit Networks in GaP/Si Samples
  • 07:14Conclusion

Summary

Automatic Translation

Automatic Translation

The use of electron channeling contrast imaging in a scanning electron microscope to characterize defects in III-V/Si heteroexpitaxial thin films is described. This method yields similar results to plan-view transmission electron microscopy, but in significantly less time due to lack of required sample preparation.

Tags

Keywords: Electron Channeling Contrast ImagingECCIScanning Electron MicroscopeSEMIII-V HeteroepitaxialMisfit DislocationsGaPSi(001)Plan-view Transmission Electron MicroscopyPV-TEMDefect CharacterizationCritical ThicknessThreading DislocationsStacking Fault

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