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JoVE Journal
Engineering

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
 

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Article DOI: 10.3791/53872
May 28th, 2016

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Summary May 28th, 2016

The optical, electrical, and structural properties of dislocations and of grain boundaries in semiconductor materials can be determined by experiments performed in a scanning electron microscope. Electron microscopy has been used to investigate cathodoluminescence, electron beam induced current, and diffraction of backscattered electrons.

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