Germanium Deposition
Germanium Deposition - Related Videos
09:45
Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
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Cited by 3 •
2016
This work details the procedures for the growth and characterization of crystalline SrTiO3 directly on germanium substrates by atomic layer deposition. The procedure illustrates the ability of an all-chemical growth method to integrate oxides monolithically onto semiconductors for metal-oxide semiconductor devices.
12:38
Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
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Cited by 3 •
2011
Here we describe a simple method for patterning oxide-free silicon and germanium with reactive organic monolayers and demonstrate functionalization of the patterned substrates with small molecules and proteins. The approach completely protects surfaces from chemical oxidation, provides precise control over feature morphology, and provides ready access to chemically discriminated patterns.
08:15
Synthesis of Nine-atom Deltahedral Zintl Ions of Germanium and their Functionalization with Organic Groups
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Cited by 1 •
2012
We present the high-temperature synthesis of intermetallic precursors K4Ge9, their dissolution in ethylenediamine to form Ge94- deltahedral Zintl ions, and the reaction of the clusters with alkynes to form organo-Zintl ions. The latter are characterized by electrospray mass spectrometry in solutions and by single-crystal X-ray diffraction in the solid state.
02:33
Phase Transitions: Sublimation and Deposition
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2020
Some solids can transition directly into the gaseous state, bypassing the liquid state, via a process known as sublimation. At room temperature and standard pressure, a piece of dry ice (solid CO2) sublimes, appearing to gradually disappear without ever forming any liquid. Snow and ice sublimate at temperatures below the melting point of water, a slow process that may be accelerated by winds and the reduced atmospheric pressures at high altitudes. When solid iodine is warmed, the solid sublimes...
10:52
Formation of Thick Dense Yttrium Iron Garnet Films Using Aerosol Deposition
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Cited by 7 •
2015
This report describes the use of a custom-built system to perform aerosol deposition of thick films of yttrium iron garnet onto sapphire substrates at RT. The deposited films are characterized using scanning electron microscopy, profilometry, and ferromagnetic resonance to give a representative overview of the capabilities of the technique.
FAQs
Nucleation determines how germanium atoms first organize on the prepared surface, while subsequent growth establishes film continuity and thickness. Poor nucleation can promote defects or uneven coverage, weakening the interface and reducing device reliability. Engineering control of the early growth stage is therefore important when forming germanium-on-silicon structures or other thin films with targeted electrical and optical behavior.
Surface preparation, substrate temperature, precursor or source delivery, and deposition conditions influence thickness, composition, crystallinity, and interface quality. These variables affect how atoms condense, react, and arrange within the layer. Maintaining suitable conditions helps engineers obtain uniform films and reduce defects, which supports more predictable performance in semiconductor, photonic, and infrared-device structures.
Vapor-phase approaches deliver germanium through chemical precursors, whereas physical-source approaches supply germanium from a source that reaches the substrate. In either case, the arriving material must form a continuous layer under controlled surface conditions. The choice of delivery route provides an engineering means to tailor the resulting film's composition, crystallinity, thickness, and interface characteristics.
The interface connects the deposited germanium layer to the underlying silicon structure, so its quality can affect film continuity, defects, and device reliability. Careful control of nucleation and growth helps create a more suitable transition between the materials. This is especially relevant to germanium-on-silicon engineering, where deposition must fit with established silicon manufacturing processes.
A typical process begins by preparing the substrate, establishing the selected deposition conditions, and supplying germanium through a vapor-phase precursor or physical source. The substrate may be heated or otherwise conditioned so arriving atoms condense or react at its surface. Engineers then evaluate film thickness, composition, crystallinity, uniformity, and interface quality to assess the resulting layer.
Key outcomes include thickness uniformity, composition, crystallinity, defect level, and interface quality. Together, these characteristics indicate whether the layer has the controlled electrical and optical behavior required for its intended structure. Evaluation also helps identify process adjustments needed to improve reliability when the film is integrated into semiconductor devices, infrared detectors, or photonic components.
Applications include semiconductor devices, infrared detectors, photonic components, and germanium-on-silicon structures. These uses depend on controlling the deposited layer's electrical and optical properties while maintaining suitable uniformity and interfaces. The process is particularly valuable when engineers need germanium functionality within structures that also rely on established silicon manufacturing approaches.