Low-intensity pulsed electric fields stimulate cell proliferation
According to the CCK-8 assay, the proliferation rate of RSC96 in the 5 kV/cm group was significantly faster than that of the control group cells. However, as the parameters increased (20 kV/cm and 40 kV/cm), the proliferation rate was unstable, even lower than that of the control group. The cell proliferation rate of RSC96 cells in the 40 kV/cm group was significantly lower than the control and 5 kV/cm groups, showing a significant statistical difference (P < 0.05). Due to not meeting the experimental requirements of cell proliferation, the 20 kV/cm and 40 kV/cm groups were excluded in subsequent experiments (Figure 1).
Low-intensity pulsed electric fields promote the expression of S100β
S100β, as a specific marker protein of SCs, participates in various functions, including neurite extension and axonal proliferation14. Additionally, S100β protein has been found to act as a neurotrophic factor during development, and its expression increases in cases of nerve injuries. Previous studies have demonstrated that S100β can work with brain-derived neurotrophic factor (BDNF) to regulate different signal transduction cascades and contribute to neuronal maturation axon growth14,25. Under the microscope, scattered cytoplasmic S100β-positive cells in red were observed in cell crawling assays across all groups (Figure 2A). After three days of cultivation, the integrated optical density (IOD) of fluorescence in the 5 kV/cm group of RSC96 cells was significantly higher than that of the control group and the 10 kV/cm group, showing a significant statistical difference (***P < 0.001; ****P < 0.0001) (Figure 2B).
Low-intensity pulsed electric fields promote the expression of NF-H
NF-H interacts with other intermediate filaments to form a network and is a major component of the neuronal cytoskeleton. Under the microscope, scattered cytoplasmic NF-H-positive cells in red were observed in cell crawling assays across all groups (Figure 3A). After three days of cultivation, the integrated optical density (IOD) of fluorescence in the 5 kV/cm group of RSC96 cells was significantly higher than that of the control group and the 10 kV/cm group, showing a significant statistical difference (*P<0.05; **P < 0.01) (Figure 3B).
Low-intensity pulsed electric fields regulate the expression of GFAP
The expression of glial fibrillary acidic protein (GFAP) is one of the indicators of astrocyte activity. Astrocytes initially exhibit reactive proliferation following nerve injury, which has a protective effect in the early stages. However, excessive proliferation of glial cells can lead to the formation of glial scars, impeding the connectivity of neuronal fibers26. Previous research has demonstrated that genes typically expressed during axon growth are re-expressed, such as GFAP27. Under the microscope, scattered cytoplasmic GFAP-positive cells in red were observed in cell crawling assays across all groups (Figure 4A). After three days of cultivation, the integrated optical density (IOD) of fluorescence in the 5 kV/cm group of RSC96 cells was significantly lower than that of the control group and the 10 kV/cm group, showing a significant statistical difference (****P < 0.0001; ***P < 0.001) (Figure 4B).
Low-intensity pulsed electric fields promote the expression of Sox10
Sox10 is continuously expressed in SCs, a key transcription factor for peripheral nerve myelination13. Under the microscope, scattered cytoplasmic Sox10-positive cells in green were observed in cell crawling assays across all groups (Figure 5A). After 3 days of cultivation, the mean gray value in the 5 kV/cm group of RSC96 cells was significantly higher than that of the control group and the 10 kV/cm group, showing a significant statistical difference (*P < 0.05; *P < 0.05) (Figure 5B).
Low-intensity pulsed electric fields promote cell migration
Comparing the migration rates of RSC96 cells after 24 h of scratch assay, it was observed that the migration of RSC96 cells in the 5 kV/cm group was significantly accelerated compared to the control group and the 10 kV/cm group (Figure 6).

Figure 1: CCK8 assay of cellular proliferation of RSC96 cells stimulated at 5 kV/cm, 10 kV/cm, 20 kV/cm and 40 kV/cm, and controls. The results represent the mean ± SD based on ≥3 replicates. NS not significant; *P < 0.05; **P < 0.01; **P < 0.01 Please click here to view a larger version of this figure.

Figure 2: Expression of S100β in RSC96 cells stimulated at 5 kV/cm, 10 kV/cm, and controls. The results represent the mean ± SD based on ≥3 replicates. ***P < 0.001; ****P < 0.0001. Please click here to view a larger version of this figure.

Figure 3: Expression of NF-H in RSC96 cells stimulated at 5 kV/cm, 10 kV/cm, and controls. The results represent the mean ± SD based on ≥3 replicates. *P < 0.05; **P < 0.01. Please click here to view a larger version of this figure.

Figure 4: Expression of GFAP in RSC96 cells stimulated at 5 kV/cm, 10 kV/cm, and controls. The results represent the mean ± SD based on ≥3 replicates. ****P < 0.0001; ***P < 0.001. Please click here to view a larger version of this figure.

Figure 5: Expression of Sox10 in RSC96 cells stimulated at 5 kV/cm, 10 kV/cm, and controls. The results represent the mean ± SD based on ≥3 replicates. *P < 0.05; *P < 0.05. Please click here to view a larger version of this figure.

Figure 6: Cell scratching assay of RSC96 cells stimulated at 5 kV/cm, 10 kV/cm, and controls. The results represent the mean ± SD based on ≥3 replicates. **P < 0.01; ***P < 0.001. Statistical data is based on ordinary one-way ANOVA. Please click here to view a larger version of this figure.